PhD | Swiss Federal Institute of Technology in Zurich, Switzerland
About Yuping Zeng
Prof. Zeng’s research focuses on creating high-speed devices for high performance applications and novel electron devices for low power applications by using new materials, novel device design and innovative fabrication techniques. Her research interests include (1) high speed transistors (heterojunction bipolar transistors and high electron mobility transistors); (2) novel transistors (tunneling field effect transistors and III-V metal-oxide-semiconductor field effect transistors); and (3) light emitting diodes, laser diodes, photodetectors, etc. She investigates these advanced fabricated devices using modeling and simulation.
Prof. Zeng joined the ECE faculty in fall 2016. She was one of 20 students selected to Jilin University at the age of 15 for a precocious university program in China, obtaining her B.S. before she was 19. She obtained her M.S. from the National University of Singapore where her main research focused on nanoscale material processes and characterization. She then received her Ph.D. from the Swiss Federal Institute of Technology where she worked with Prof. Colombo Bolognesi on optimizing the design and fabrication process of high speed InP/GaAsSb double heterojunction bipolar transistors (DHBTs). Following her Ph.D., she performed postdoctoral research with Profs. Chenming Hu and Ali Javey at the University of California at Berkeley, investigating III-V tunneling field effect transistors (TFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs). Prof. Zeng has published 48 journal papers and 22 international conference papers.