Olowolafe's WWW Home Page

"Interconnect metallization is the life-wire of semiconductor devices."

Johnson Olufemi Olowolafe,
Associate Professor,
Department of Electrical and Computer Engineering,
213 Evans Hall, University of Delaware, DE 19716.
Voice: (302) 831-4272
Fax: (302) 831-4316
e-mail: olowolaf@ee.udel.edu.

EDUCATION

  1. Ph.D. Applied Physics,                                                 California Institute of Technology, Pasadena, California;
  2. M.S. Applied Physics,                                                   California Institute of Technology, Pasadena, California;
  3. B.Sc. Physics, First Class Honors,                           University of Ife, Ile-Ife, Nigeria.
PROFESSIONAL EXPERIENCE

1995-PRESENT:                                       Associate Professor, University of Delaware, DE

1990-1995:                                               Staff Electrical Engineer, Motorola Inc., Austin, Texas

1989-1990:                                               Visiting Associate Professor, Cornell University, Ithaca, NY

1986-1989:                                               Associate Professor, University of Ife

1986-1987:                                               Professor and Chair, Dept of Physics, Fed. University of Tech., Akure
                                                                                                                   (new and tenured appointment)

1978-1986                                                     Lecturer ('78-'80) and Senior Lecturer ('80-'85), University of Ife

1977-1978                                              World Trade Postdoctoral Fellow, IBM, T.J. Watson Research Center, Yorktown Heights, NY
 
 

PUBLICATIONS

          a)  Journals:       over 100 journal and conference articles

            b)  Patents:                 7 patents (5 issued and 2 pending)

            c)  Books:           2 invited book chapters
 
 
 

SELECTED PUBLICATIONS

1.  J. O. Olowolafe, Jun Liu and R. B. Gregory, "Effect of Si or Al interlayers on the properties of Ta an Mo contacts to p-type SiC," J. Electronic  Materials
29 (3) 391-397 (2000).

2.  J. O. Olowolafe, I. Rau, K. M. Unruh, C. P. Swann, Z. Jawad, and T. Alford, "The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N," J. Electron.
Mater. 28 (12), 1399-1402 (1999).

3.  G. Katulka, J. Kolodzey, and J. O. Olowolafe, “Analysis of High-Temperature Materials for Application to Electric Weapon Technology,” IEEETransactions on Magnets 35 (1)  35-42 (1999).

4.  E. Chowdhury, M. Dashiell, G. Qiu, J. O. Olowolafe, R. Jonczyk, D. Smith, A. Barnett, J. Kolodzey, K. M. Unruh, C. P. Swann, J. Suehle, and Y. Chen, “Structural, Optical and Electronic Properties of Oxidized AlN Thin Films at different Temperatures, “ J. of Electronic Materials, 27, 918 (1998).

5.  T. Peng, J. Piprek, G. Qiu, J. O. Olowolafe, K. M. Unruh, C. P. Swann and E. F. Schubert, “Band gap bowing and refractive index spectra of polycrystalline AlxIn1-xN films deposited by sputtering,”  Appl. Phy. Lett., 71, 2439 (1997).

6.  G. Qiu, J. O. Olowolafe, T. Peng, K. M. Unruh, C. P. Swann and J. Piprek, “Low-temperature deposition and characterization of AlxIn1-x thin films, Mat. Res. Symp. Proc. vol. 449, 301 (1997).

7.  G. Qiu, F. Chen, J. O. Olowolafe, C. P. Swann, K. M. Unruh, and D. S. Holmes, “Characterization of Metal / AlxIn1-xN Interface:  Thermal Stability and Electrical properties,” Mat. Res. Symp. Proc. vol. 449, 1073 (1997).

8.  B. A. Orner, J. Olowolafe, K. Roe, J. Kolodzey, T. Layrsen, J. W. Mayer, and J. Spear, “Band gap of Ge rich Si1-x-yGexCy ,” Appl. Phy. Lett. 69, 2557 (1996).
 

MEMBERSHIP IN INTERNATIONAL SOCIETIES

Olowolafe is a member of

1)  Senior Member:  The Institute of Electrical and Electronics Engineers (IEEE),

2)  Materials Research Society (MRS),

3)  The American Physical Society (APS),

4)  The American Society of Engineering Education (ASEE),

5)  The International Center for Theoretical Physics (ICTP), Trieste, Italy,

6)  The Bomische Physical Society

7)  American Society of Engineering Education (ASEE)
 

 Current Research Activities

Our group is deeply focused on:

Processing, characterization and device application of III-V nitride Semiconductors; applications are in optoelectronic and high-temperature and high-power chips; Interaction of metals with semiconductors, including III-V nitrides (GaN, AlN, AlInN, etc.), SiC and Si- and Ge-based compound semiconductors; Processing and charaterization of ohmic and Schottky metal contacts for III-V nitrides, SiC and compound semiconductors; multilevel interconnect metallization of semiconductor devices and reliability (electromigration) evaluation;
Development of novel alloy diffusion barriers for interconnect applications; ultra-thin dielectrics for gate application.

  1. Analytical tools employed in our investigations include the following:
    1. Rutherford backscattering spectrometry (RBS);
    2. X-ray diffraction (XRD) technique;
    3. Electrical Evaluations (I-V, C-V, Hall effect techniques)
    4. Transmission Electron Microscopy (TEM);
    5. Scanning Electron Microscopy (SEM);
    6. Auger Electron Spectroscopy.

COURSE INFORMATION

Eleg423 Electronic Proerties of Matter (Fall)

Eleg867  Devices and Metallization (Fall)

Eleg661Materials and Devices Seminar (Fall)

Eleg433 Energy Systems (Spring)

Email:  olowolaf@ee.udel.edu