Wilmington News Journal article, 7 April 1999 (Below)
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Wilmington News Journal article, 7 April 1999 (Below) |
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SiC can be alloyed with Ge, forming a new material (SiC:Ge) that may extend the opportunities for high-power, high temperature applications The structural, electronic, and optical properties of single crystalline n-type 4H-SiC implanted with Ge atoms have been investigated through x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), Raman spectroscopy and sheet resistivity measurements. Ge atoms are implanted under the conditions of a 300 KeV ion beam energy with a dose of 2 x 10 16 cm-2. X-ray diffraction of the Ge-implanted sample showed broadening of the Bragg peaks. A shoulder on the (0004) reflection indicated an increase in the lattice constant corresponding to Ge substitution and implantation induced lattice damage. The composition of Ge detected through XRD was reasonably consistent with RBS measurements that indicated the presence of 1.2% Ge in a 1600 Å thick layer near the SiC surface. Raman Spectroscopy showed fundamental differences in the Ge implanted SiC (SiC:Ge) compared to a pure sample of SiC. Sheet resistivity measurements indicate a higher conductivity in the Ge implant by a factor of 1.94 compared to unimplanted SiC. These results demonstrate the possibility of Ge substitution in the crystalline lattice of 4H-SiC substrates for possible electronic device applications. SiC:Ge may lead to new heterostructures that are compatible with SiC, but more work is needed.
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