Research on Nanotechnology at the University of Delaware
 
 

The effects of composition on the properties of quantum dots

 

Size distribution of SiGeC quantum dots grown on Si — 311 – and Si — 001 – surfaces
 
 
 
 

                                                FIG. 1. (a) Atomic force microscopy scan of 2 µm x 2µm area of Si0.1Ge0.89 grown on (311)

                                                Si and quantum dot area distribution, (b) atomic force microscopy scan of 2 µm x 2µm area of

                                                Si0.1Ge0.89C0.01 grown on (311) Si and quantum dot area distribution.  The Curves were 

                                                normalized by multiplying the number of equally sized quantum dots with their area and dividing

                                                the result by the scan area.

                                              

                                                FIG. 2. Fourier intensity distribution spectrum vs. quantum dot spatial wavelength for Ge, GeC,

                                                SiGe, and SiGeC quantum dots on Si(311) and Si(001), obtained from AFM scans of Fig. 1,

                                                over the 2 µm x 2µm area.  Markers represent measured data, solid lines were calculated by 

                                                fitting the measured data to an exponentially altered Gaussian.

Last Updated August 22, 2001

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