2.J.
Kolodzey, D. Slobodin, S. Aljishi, S. Quinlan, R. Schwarz, D.-S. Shen,
P.M. Fauchet and S. Wagner, "Transport properties of a-Si,Ge:H alloys prepared
from SiF4, GeF4, and H2 in R.F. or D.C.
glow discharges," J. Non-Crystalline Solids, vol. 77 & 78, pp.
897-900, 1985.
3.J.
Kolodzey, S. Aljishi, R. Schwarz, D.-S. Shen, I. H. Campbell, P.M. Fauchet,
S. A. Lyon and S. Wagner, "Carrier scattering at periodic a-Si:H,F barriers
in a-Si,Ge:H,F alloys," Superlattices and Microstructures, vol.
2, pp. 391-396, 1986.
4.C.-L.
Chiang, R. Schwarz, D. Slobodin, J. Kolodzey and S. Wagner, "Measurements
of the minority carrier diffusion length in thin semiconductor films,"
IEEE
Trans. Electron Devices, vol. ED-33, pp. 1587-1592, 1986.
5.P.M.
Fauchet, D. Hulin, A. Migus, A. Antonetti, J. Kolodzey and S. Wagner, "Initial
stages of trapping in a-Si:H observed by femtosecond spectroscopy,"
Phys.
Rev. Lett., vol. 57, pp. 2438-2441, 1986.
6.J.
Kolodzey, S. Aljishi, R. Schwarz, D. Slobodin and S. Wagner, "Properties
of a-Si,Ge:H,F alloys prepared by RF glow discharge in a UHV reactor,"
J.
Vac. Sci. Technol. A, vol. 4, pp. 2499-2504, 1986.
7.R.
Schwarz, J. Kolodzey, R.T. Kouzes and S. Wagner, "Simultaneous
depth profiling of constituents and impurities by elastic proton scattering
in amorphous hydrogenated silicon films," Appl. Phys. Lett.,
vol. 50, pp. 188-190, 1987.
8.Z
E. Smith, V. Chu, K. Shepard, S. Aljishi, D. Slobodin, J. Kolodzey, S.
Wagner and T. L. Chu, "Photothermal
and photoconductive determination of surface and bulk defect densities
in amorphous silicon films,"
Appl. Phys. Lett., vol. 50, pp.
1521-1523, 1987.
9.S.
Aljishi, V. Chu, Z E. Smith, D.-S. Shen, J.P. Conde, D. Slobodin, J. Kolodzey
and S. Wagner, "Steady state and
transient transport in a-Si,Ge:H,F alloys," J. Non-Crystalline
Solids, vol. 97 & 98, pp. 1023-1026, 1987.
10.J.
Kolodzey, R. Schwarz, S. Aljishi, V. Chu, D.-S. Shen, P.M. Fauchet and
S. Wagner, "Optical and electronic properties
of an amorphous silicon-germanium alloy with a 1.28 eV optical gap,"
Appl.
Phys. Lett., vol. 52, pp. 477-479, 1988.
11.J.P.
Leburton, J. Kolodzey and S. Briggs, "Bipolar
tunneling field effect transistor: a three terminal negative differential
resistance device for high-speed applications," Appl. Phys. Lett.,
vol. 52, pp. 1608-1610, 1988.
12.J.
Kolodzey, J. Laskar, T.K. Higman, M. A. Emanuel, J.J. Coleman and K. Hess,
"Microwave frequency operation of the
heterostructure hot electron diode," IEEE Electron Device Lett.,
vol. 9, pp. 272-274, 1988.
13.M.
A. Emanuel, T. K. Higman, J. M. Higman, J. S. Kolodzey, J. J. Coleman and
K. Hess, "Theoretical and experimental
investigations of the heterostructure hot electron diode," Solid
State Electronics, vol. 31, pp. 589-592, 1988.
14.J.P.
Leburton and J. Kolodzey, "Tunneling
injection into modulation doping structures: a basic mechanism for negative
differential resistance three terminal high speed devices," IEEE
Trans. Electron Devices, vol. 35, pp. 1530-1532, 1988.
15.A.
A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina
and H. Hier, "Dependence of Current-Gain
Cutoff Frequency on Gate-Length in Submicron InGaAs/InAlAs MODFETs,"
Electronics
Lett., vol. 25, pp. 440-442, 1989.
16.A.
Ketterson, E. Andideh, I. Adesida, T. L. Brock, J. Baillargeon, J. Laskar,K.
Y. Cheng and J. Kolodzey, "Selective
reactive ion etching for short gate-length GaAs/AlGaAs/InGaAs pseudomorphic
MODFETs," J. Vac. Sci. Technol., vol. B7, pp. 1493--1496, 1989.
17.J.
Kolodzey, J. Laskar, S. Boor, S. Reis, A. Ketterson, I. Adesida, D. Sivco,
R. Fischer and A.Y. Cho, "Cryogenic
temperature performance of modulation doped field effect transistors,"
Electronics
Lett., vol. 25, pp. 777-779, 1989.
18.J.N.
Baillargeon, K. Y. Cheng, J. Laskar and J. Kolodzey, "A
three-terminal delta-doped barrier switching device with S-shaped negative
differential resistance," Appl. Phys. Lett., vol. 55, pp. 663-665,
1989.
19.A.
A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina,
and H. Hier, ``DC and RF characterization
of short gate-length InGaAs/InAlAs MODFETs," IEEE Trans. Electron
Devices, vol. 36, pp. 2361--2363, 1989.
20.J.
Laskar, A. A. Ketterson, J.N. Baillargeon, T. Brock, I. Adesida, K. Y.
Cheng, and J. Kolodzey, ``Gate controlled
negative differential resistance in drain current characteristics of GaAs/InGaAs/AlGaAs
pseudomorphic MODFETs," IEEE Electron Device Lett., vol. 10,
pp. 528--530, 1989.
21.I.
Adesida, A. A. Ketterson, T. L. Brock, J. Laskar, J. Kolodzey, O. Aina
and H. Hier, "Fabrication and characterization
of short gate-length InAlAs/InGaAs/InP MODFETS," Microelectronics
Engineering, vol. 9, pp. 345-348, 1989.
22.J.
Laskar, J. Kolodzey, S. Boor, K. C. Hsieh, S. Kalem, S. Caracci, A. A.
Ketterson, T. Brock, I. Adesida, D. Sivco, and A. Y. Cho, "High
indium content graded channel InGaAs/InAlAs pseudomorphic MODFETs,"
J.
Electronic Materials, vol. 19, pp. 249--252, 1990.
23.J.
Kolodzey, J. Laskar, S. Boor, S. Agarwala, S. Caracci, A. A.Ketterson,
I. Adesida, K. C. Hsieh, D. Sivco, and A. Y. Cho, "DC
and RF properties of InAlAs/InGaAs pseudomorphic MODFETs with graded channels,"
J.
Vac. Sci. Technol., vol. 8, pp. 360--363, 1990.
24.I.
Adesida, A. Ketterson, J. Laskar, S. Agarwala, T. Brock, J. Kolodzey, and
H. Morkoc, "0.2 µm
T-Gate InAlAs/InGaAs MODFET with fT of 170 GHz," Microcircuit
Engineering, vol. 11, pp. 69 --72, 1990.
25.J.
Laskar, J. Kolodzey, A. Ketterson, S. Caracci, and I. Adesida, ``Frequency
response of sub--micrometer pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at
cryogenic temperatures," Cryogenics, vol. 30, pp. 1134--1139,
1990.
26.W.
H. Guggina, A. A. Ketterson, E. Andideh, J. Hughes, I. Adesida, S. Caracci,
and J. Kolodzey, ``Characterization
of GaAs/AlGaAs selective reactive ion etching in SiCl4/SiF4
plasmas, " J. Vac. Sci. Technol. B, vol. 8, pp. 1956-1959, 1990.
27.J.
Laskar, J. Kolodzey, A. A. Ketterson, I. Adesida, and A.YCho,
``Characteristics of doped channel
MISFETs at cryogenic temperatures," IEEE Electron Device Lett.,
vol. 11, pp. 300--302, 1990.
28.J.
Laskar and J. Kolodzey, ``Cryogenic
vacuum high frequency probe station," J. Vac. Sci. Technol. B,
vol. 8, pp. 1161--1165, 1990.
29.J.
Laskar, A.W. Hanson, B.T. Cunningham, J. Kolodzey, G. Stillman, and S.J.
Prasad, ``Effect of reduced temperature
on the fT of AlGaAs/GaAs heterojunction bipolar transistors,"
IEEE
Electron Device Lett., vol. 12, pp. 329--331, 1991.
30.M.
Feng, J. Laskar, W. Miller, J. Kolodzey, G.E. Stillman, and C. L. Lau,
``Characterization of ion implanted
InGaAs/GaAs 0.25 micron gate metal semiconductor field effect transistors
with fT > 100 GHz," Appl. Phys. Lett., vol. 58, pp.
2690--2691, 1991.
31.J.
Laskar, S. Maranowski, S. Caracci, M. Feng, and J. Kolodzey, ``Reduced
lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field
effect transistors,'' Appl. Phys. Lett., vol. 59, pp. 2412--2414,
1991.
32.F.
Wang, T. Muschik, T. Fischer, M. Bollu, J. Kolodzey, and R. Schwarz, ``Asymmetric
degradation of electron and holeµt
- products in a-SiC:H multilayers under illumination," J. Non-Crystalline
Solids, vols. 137 & 138, pp. 1143--1146, 1991.
33.R.
Schwarz, T. Fischer, P. Hanesch, T. Muschik, J. Kolodzey, H. Cerva, H.
L. Meyerheim, and B.M.U. Scherza, ``Limitations
of interface sharpness in a-Si:H/a-SiC:H multilayers," Applied Surface
Science, vol. 50, pp. 456--461, 1991.
34.J.
Kolodzey, P. Hanesch, T. Fischer, R. Schwarz, G. Zorn, and H. Goebel, ``Interdiffusion
in amorphous Si/SiC multilayers,"
Materials Science and Engineering
B11, pp. 43-46, 1992.
35.J.
Laskar, J.M. Bigelow, J.P. Leburton, and J. Kolodzey, ``Experimental
and theoretical investigation of the DC and high frequency characteristics
of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs
MODFETs," IEEE Trans. on Electron Devices, vol. 39, pp. 257-263,
1992.
36.S.
Maranowski, J. Laskar, M. Feng, and J. Kolodzey, ``Cryogenic
microwave performance of 0.5 µm
InGaAs MESFETs," IEEE Electron Device Lett., vol. 13, pp. 64-66,
1992.
37.J.
Laskar, R. N. Nottenburg, J. A. Baquedano, A. F. J. Levi, J. Kolodzey,
"Forward transit delay in InGaAs
heterojunction bipolar transistors with nonequilibrium electron transport,"
IEEE
Trans. Electron Devices, vol. 40, pp. 1942-1949, 1993.
38.J.
Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao,
M. M. Waite, S. I. Shah, C. P. Swann, and K. M. Unruh, ``Optical
and electronic properties of SiGeC alloys grown on Si substrates,''
J.
Crystal Growth, v. 157, pp. 386--391, 1995.
39.J.
Kolodzey, P. A. O'Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C.
P. Swann, M. M. Waite and S. Ismat Shah, "Growth
of germanium-carbon alloys on silicon substrates by molecular beam epitaxy,"
Appl.
Phys. Lett., vol. 67, pp. 1865-1867, 1995.
40.B.
A. Orner, D. Hits, J. Kolodzey, F.J. Guarin, A.R. Powell, and S. S. Iyer,
``Optical absorption in alloys of
Si, Ge, C, and Sn,'' J. Appl. Phys., v. 79, pp. 8656-8659, 1996.
41.B.
A. Orner, J. Olowolafe, K. Roe, J. Kolodzey, T. Laursen, J. W. Mayer and
J. Spear, "Bandgap of Ge-rich SiGeC
alloys,"
Appl. Phys. Lett., vol. 69, pp. 2557-2559, 1996.
42.F.
Chen, B. A. Orner, D. Guerin, A. Khan, P. R. Berger, S. Ismat Shah, and
J. Kolodzey, ``Current transport characteristics
of SiGeC/Si heterojunction diodes, '' IEEE Electron Device Lett.,
v. 17, pp. 589-591, 1996.
43.B.
Orner, A. Khan, D. Hits, F. Chen, K. Roe, J. Pickett, X. Shao, R. G. Wilson,
P. R. Berger and J. Kolodzey, ``Optical
properties of GeC alloys,'' J. Electronic Materials, vol. 25,
pp. 297-300, 1996.
44.F.
Chen, B. A. Orner, J. Kolodzey, M. M. Waite, S. I. Shah and S. S. Iyer,
``Measurements of energy band offsets
of SiGe/Si and GeC/Ge heterojunctions,'' Appl. Surface Science,
vol. 104-105, pp. 615-620, 1996.
45.K.E.
Junge, R. Lange, J.M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and
J. Kolodzey, ``Dielectric response
of thick low dislocation density Ge epilayers grown on (001) Si,''
Appl.
Phys. Lett., v. 69, pp. 4084-4086, 1996.
46.J.
Kolodzey, F. Chen, B. A. Orner, D. Guerin and S. Ismat Shah, ``Energy
band offsets of SiGeC heterojunctions,''
Thin Solid Films, v.
302, pp. 201-203, 1997.
47.X.
Shao, S. L. Rommel, B. A. Orner, P. R. Berger, J. Kolodzey, and K. M. Unruh,
``Low resistance Ohmic contacts to
p-GeC on Si,'' IEEE Electron Device Lett., v. 18, pp. 7-9, 1997.
48.B.
A. Orner, and J. Kolodzey, ``SiGeC
alloy band structures by linear combination of atomic orbitals,'' J.
Appl. Phys., v. 81, pp. 6773-6780, 1997.
49.E.A.
Chowdhury, J. Kolodzey, J. Olowolafe, G. Qui, G. Katulka, D. Hits, M. Dashiell,
D. van der Weide, C.P. Swann, and K. M. Unruh, ``Thermally
oxidized AlN thin films for device insulators,'' Appl. Phys. Lett.,
v. 70, pp. 2732-2734, 1997.
50.Xiaoping
Shao, S. L. Rommel, B. A. Orner, J. Kolodzey, and Paul R. Berger, ``A
p-GeC/n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy,''
IEEE
Electron Device Lett., v. 18, pp. 411-413, 1997.
51.J.
Kolodzey, E.A. Chowdhury, G. Qui, J. Olowolafe, C.P. Swann, K.M. Unruh,
J. Suehle, R.G. Wilson, and J.M. Zavada, ``The
effects of oxidation temperature on the capacitance-voltage characteristics
of oxidized AlN films on Si,'' Appl. Phys. Lett., v, 71, pp.
3802-3804, 1997.
52.M.W.
Dashiell, L.V. Kulik, D. Hits, J. Kolodzey, and G. Watson, ``Carbon
incorporation in SiC alloys grown by molecular beam epitaxy using a single
silicon-graphite source,'' Appl. Phys. Lett., v. 72, pp. 833-835,
1998.
53.Xiaoping
Shao, S.L. Rommel, B. A. Orner, H. Feng, M.W. Dashiell, R. T. Troeger,
J. Kolodzey, Paul R. Berger, and Thomas Laursen, ``1.3µm
photoresponsivity in Si-based Ge1-yCy photodiodes,''
Appl.
Phys. Lett., 72, pp. 1860-1862, 1998.
54.L.V.
Kulik, D. Hits, M.W. Dashiell, and J. Kolodzey, ``The
effect of composition on the thermal stability of SiGeC/Si heterostructures,''
Appl.
Phys. Lett., v. 72, pp. 1972-1974, 1998.
55.Joachim
Piprek, Thomas Troeger, Bernd Schroeter, J. Kolodzey, ``Thermal
conductivity reduction in GaAs/AlAs distributed Bragg reflectors,''
Photonics
Technology Lett.,v. 10, pp.
81-83, 1998.
56.R.
Jonczyk, D. A. Hits, L.V. Kulik, J. Kolodzey, M. Kaba, and M. Barteau,
``Size distribution of SiGeC dots
grown onSi(311) and Si(100) surfaces,''
J.
Vac. Sci. Tech., v. B 16, pp. 1142-1144, 1998.
57.C.
Guedj, M.W. Dashiell, L.V. Kulik, and J. Kolodzey, ``Precipitation
ofß-SiC
in Si1-yCy alloys,'' J. Appl. Phys., v.
84, no. 7, pp. 4631-4633, 1998.
58.K.
E. Junge, N. R. Voss, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, D.
A. Hits, B. A. Orner, R. Jonczyk, and J. Kolodzey, ``Optical
properties and band structure of GeC and Ge-rich SiGeC alloys,'' Thin
Solid Films, v. 313-314, pp. 172-176, 1998.
59.Sean
L. Rommel, Thomas E. Dillon, M. W. Dashiell, H. Feng, J. Kolodzey, Paul
R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A. C. Seabaugh, G. Klimeck
and D. K. Blanks, ``Room temperature
operation of epitaxially grown Si/ Si0.5Ge0.5 /Si
resonant interband tunneling diodes,'' Appl. Phys. Lett., v.
73, 1998, pp. 2191-2193, 1998.
60.A.
Chowdhury, M. Dashiell, G. Qui, J. O. Olowolafe, R. Jonczyk, D. Smith,
A. Barnett, J. Kolodzey, K. M. Unruh, C. P. Swann, J. Suehle and Y. Chen,
``Structural, optical and electronic
properties of oxidized AlN thin films at different temperatures,''
J.
Electronic Materials, v. 27, pp. 918-922, 1998.
61.J.
Kolodzey, O. Gauthier-Lafaye, S. Sauvage, J.-L. Perrossier, P. Boucaud,
F.H. Julien, J.-M. Lourtioz, F. Chen, B. A. Orner, K. Roe, C. Guedj, R.G.
Wilson, and J. Spear, “The effects of
composition and doping on the response of GeC/Si photodiodes,“ IEEE
J. Selected Topics in Quantum Electronics, v. 4, pp. 964-969, Nov./Dec.
1998.
62.M.
W. Dashiell, R. T. Troeger, K. J. Roe, A-S. Khan, B. Orner, J. O. Olowolafe,
P. R. Berger, R. G. Wilson and J. Kolodzey, ``Electrical
and optical properties of phosphorus doped Ge1-yCy,''
Thin
Solid Films, v. 321, pp. 47-50, 1998.
63.G.
Katulka, J. Kolodzey and J. Olowolafe, "Analysis
of high temperature materials for application to electric weapon technology,"
IEEE
Trans. on Magnetics, v. 35, pp. 356-360, 1999.
64.Xiaoping
Shao, Ralf Jonczyk, M. W. Dashiell, D. Hits, B. A. Orner, A-S. Khan, K.
Roe, J. Kolodzey, Paul R. Berger, M. Kaba, M. A. Barteau, and K. M. Unruh,
“Strain modification in thin Si1-x-yGexCy
Alloys on (100) Si for formation of high density and uniformly sized quantum
dots,” J. Appl. Phys., v. 85, pp. 578-582, 1999.
65.C.
Guedj and J. Kolodzey, ``Substitutional
Ge in 3C-SiC,''
Appl. Phys. Lett., v. 74, pp. 691-693, 1999.
66.G.
Katulka, C. Guedj, J. Kolodzey, R. G. Wilson, C. Swann, M. W. Tsao, and
J. Rabolt, ``Electrical and Optical
Properties of Ge Implanted 4H-SiC," Appl. Phys. Lett., v. 74,
pp. 540-542, 1999.
67.R.
Duschl, O. G. Schmidt, W. Winter, K. Eberl, M. W. Dashiell, J. Kolodzey,
N. Y. Jin-Phillipp and F. Phillipp, ``Growth
and thermal stability of pseudomorphic Ge1-yCy /Ge
superlattices on Ge (001),'' Appl. Phys. Lett., v. 74, pp. 1150-1154,
1999.
68.L.
V. Kulik, C. Guedj, M. W. Dashiell, J. Kolodzey, and A. Hairie, ``The
phonon spectra of substitutional carbon in SiGe alloys,'' Physical
Review B, v. 59, pp. 15753-15759, 1999.
69.K.
Roe, M. W. Dashiell, J. Kolodzey, C. Guedj, P. Boucaud and J.-M. Lourtioz,``The
MBE growth of Ge1-yCy alloys on Si (100) with high
carbon contents, " J. Vac. Sci. Technol. B, vol. 17, pp. 1301-1303,
May/June, 1999.
70.C.
Guedj, J. Kolodzey and A. Hairie, ``Structure
and lattice dynamics of GeC alloys using anharmonic Keating modeling,''
Physical
Review B, v. 60, (22), pp. 15150-15150, 1999.
71.J.
Kolodzey, E. A. Chowdhury, T. N. Adam, G. Qui, I. Rau, J. O. Olowolafe,
J. S. Suehle, and Y. Chen, ``Electrical
conduction and dielectric breakdown in aluminum oxide insulators on silicon,''
IEEE
Trans. Electron Devices, v. 47, pp. 121-128, 2000.
72.M.
W. Dashiell, J. Kolodzey, P. Boucaud, V. Yam and J.-M. Lourtioz,``Heterostructures
of pseudomorphic GeC and GeSiC grown on Ge (100) substrates," J.
Vac. Sci. Technol. B, vol. 18, pp. 1728-1731, May/Jun 2000.
73.M.
W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, J.
Kolodzey, A. C. Seabaugh and R. Lake, ``Current
voltage characteristics of high current density silicon Esaki diodes grown
by molecular beam epitaxy and the influence of post growth annealing,''
IEEE
Trans. Electron Devices, vol. 47, pp. 1707-1714, 2000.
74.Fen
Chen, Baozhen Li, T. D. Sullivan, C. L. Gonzalez,
C. D. Muzzy, H. K. Lee, M. D. Levy, M. W. Dashiell, and J. Kolodzey, "Influence
of underlying interlevel dielectric films on extrusion formation in aluminum
interconnects," J. Vac. Sci. Technol. B, v. 18, pp. 2826-2834,
Nov/Dev 2000.
75.K.
J. Roe, G. Katulka, J. Kolodzey, S. E. Saddow, and D. Jacobson, ``Silicon
Carbide and Silicon Carbide:Germanium Heterostructure Bipolar Transistors,''
Appl.
Phys. Lett., v. 78, pp. 2073-2075, 2001.
76.T.
Adam, J. Kolodzey, C. P. Swann, M. W. Tsao and J. F. Rabolt, “The
electrical properties of MIS capacitors with AlN gate dielectrics,” Appl.
Surface Science, v. 175-176, pp. 428-435,
2001.
77.G.
Katulka, K. Roe, J. Kolodzey, G. Eldridge, R. C. Clarke, C. P. Swann and
R. G. Wilson, “The electrical characteristics
of silicon carbide alloyed with germanium,” Appl.
Surface Science, v. 175-176, pp. 505-511,
2001.
78.K.
J. Roe, J. Kolodzey, C. P. Swann, M. W. Tsao, J. F. Rabolt, J. Chen and
G. R. Brandes, “The electrical and optical
properties of thin film diamond implanted with silicon,” Appl.
Surface Science, v. 175-176, pp. 468-473, 2001.
79.G.
Katulka, K. J. Roe, and J. Kolodzey, C. P. Swann, R. C. Clarke, G. Eldridge,
G. DeSalvo, and R. Messham, ``A
Technique To Reduce The Contact Resistance To 4H-Silicon Carbide Using
Germanium Implantation,''
J. Electronic Materials, v. 31, pp.
346-350, 2002.
80.M.W.
Dashiell, J. Kolodzey, P. Crozat, F. Aniel and J.-M. Lourtioz,
``Microwave
properties of silicon junction tunnel diodes grown by molecular beam epitaxy,''
IEEE
Electron Device Lett., v. 23, pp. 357-359, 2002.
81.A.
Hattab, M.O. Aboelfotoh, G. Tremblay, F. Meyer, J. Kolodzey, H.J. Osten,
and C. Dubois, “Diffusion and electrical
activity of copper in Si1-x-yGexCy alloys,”
Microelectronic Engineering, v. 60: (1-2) pp. 283-288, 2002.
82.M.
S. Kagan, I. V. Altukhov, E. G. Chirkova, V. P. Sinis, R. T. Troeger, S.
K. Ray, and J. Kolodzey, "THz lasing
of SiGe/Si quantum-well structures due to shallow acceptors," Phys.
Stat. Sol., v. (b) 235, no. 1, pp. 135-138, 2003.
83.M.
S. Kagan, I. V. Altukhov, E. G. Chirkova, V. P. Sinis, R. T. Troeger, S.
K. Ray, and J. Kolodzey, "THz lasing
due to resonant acceptor states in strained p-Ge and SiGe quantum-well
structures," Phys. Stat. Sol., v. (b) 235, no. 2, pp. 293-296, 2003.
84.Shouyuan
Shi, Dennis W. Prather, Liuqing Yang, and James Kolodzey, “Influence of
support structure on microdisk resonator performance,” Optical Engineering,
v. 42, Number 2, February 2003.
85. T. N. Adam, R. T. Troeger, S. K. Ray, P.-C. Lv, and J. Kolodzey, “Terahertz electroluminescence from boron impurities in bulk silicon,” Appl. Phys. Lett., vol. 83, pp. 1713-1715, 2003.
86. Kagan MS, Altukhov IV, Sinis VP, Chirkova EG, Yassievich IN, Kolodzey J, “Terahertz stimulated emission from strained p-Ge and SiGe/Si structures,” Journal Of Communications Technology And Electronics, v. 48 (9), pp. 1047-1054 Sep. 2003.
87. Sriram Venkataraman, Janusz Murakowski, Thomas N. Adam, James Kolodzey, Dennis W. Prather, “Fabrication of high-fill-factor photonic-crystal devices on silicon-on-insulator substrates (JM3 073007),” J. Microlithography, Microfabrication, and Microsystems, v. 2, number 4, pp. 248–254, October 2003.
88. I.V. Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray, J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, I.N. Yassievich, “Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures,” Physica B-Condensed Matter, v. 340-342, pp. 831-834, Dec 31 2003.
89. S. K. Ray, T. N. Adam, R. T. Troeger, J. Kolodzey, G. Looney, and A. Rosen, “Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1-xGex films,” Journal of Appl. Phys., vol. 95, pp. 5301 – 5304, May 2004.
90. M.W. Dashiell, E. Ansorge, Xin Zhang, Guanchi Xuan, J. Kolodzey, G. DeSalvo, J. Gigante, C. Clarke, and C. Swann, “Pseudomorphic SiC:Ge heterostructures formed by low energy ion implantation,” submitted to Appl. Phys. Lett., 2003.
91. Ralph T. Troeger, Ulrike Lehmann, Thomas N. Adam, Samit K. Ray, Pengcheng Lv, James Kolodzey, and Richard A. Soref, “Tunable SiGe/Si terahertz sources based on hole transitions in stepped quantum wells,” submitted to IEEE J. Quantum Elec., August, 2003.
92. P.-C. Lv, R.T. Troeger, T.N. Adam, S. Kim, J. Kolodzey, I.N. Yassievich, M.A. Odnoblyudov, and M. Kagan, “Electroluminescence at 7 Terahertz(THz) from phosphorus donors in silicon,” Appl. Phys. Lett., vol. 84, July 2004, in press.
93.
P.-C. Lv, R.T. Troeger, T.N. Adam, S. Kim, J. Kolodzey, I.N. Yassievich,
M.A. Odnoblyudov, and M. Kagan, “Terahertz emission from electrically pumped
gallium doped silicon devices,” Appl. Phys. Lett., 2004, in press.
II.
Conference and Trade Papers
1.J.
Kolodzey, "A noise analysis method for optical receivers," Proc. IEEE
International Symposium on Circuits and Systems, (IEEE, New York, 1977)
pp. 183-186.
2.F.
E. Noel and J. Kolodzey, "Nomograph shows bandwidth for specified pulse
shape," Electronics, p. 102, April 1976.
3.R.
Schwarz, J. Kolodzey, S. Aljishi, R. T. Kouzes and S. Wagner, "Radiation
damage by 12 MeV protons and annealing of hydrogenated amorphous silicon,"
18th
IEEE Photovoltaic Specialists Conf. Record, (IEEE, New York, 1985)
pp. 903-908.
4.D.
Slobodin, J. Kolodzey, S. Aljishi, Y. Okada, V. Chu, D.-S. Shen, R. Schwarz
and S. Wagner, "a-Si,Ge:H,F alloys prepared by DC and RF glow discharge
deposition," 18th IEEE Photovoltaic Specialists Conf. Record, (IEEE,
New York, 1985) pp. 1505-1512.
5.J.
Kolodzey, S. Aljishi, R. Schwarz, and S. Wagner, ``Glow discharge deposition
of a-Si1-x Gex:H,F alloys,’’ Electrochemical Soc.
Spring Meeting Extended Abstracts, Toronto, May 1985, abstract 176, vol.
85--1, p. 248.
6.S.
Wagner, D. Slobodin, J. Kolodzey, S. Aljishi and R. Schwarz, "Alloys of
amorphous hydrogenated silicon," Acta-Scripta Met. Proc. Ser., vol.
3, pp. 334-350, 1986.
7.J.
Kolodzey, S. Aljishi, Z E. Smith, V. Chu, R. Schwarz and S. Wagner, "Measurements
of light-induced defect creation in a-Si,Ge:H,F alloys," in Materials
Issues in Amorphous Semiconductor Technology,D.
Adler, Y. Hamakawa and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol.
70, 1986, pp. 237-242.
8.S.
Aljishi, Z E. Smith, D. Slobodin, J. Kolodzey, V. Chu, R. Schwarz and S.
Wagner, "Electronic transport and density of states distribution in a-Si,Ge:H,F
alloys," in Materials Issues in Amorphous Semiconductor Technology,
D.
Adler, Y. Hamakawa and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol.
70, 1986, pp. 269-274.
9.R.
Schwarz, Y. Okada, S.-F. Chou, J. Kolodzey, D. Slobodin and S. Wagner,
"Fluorine incorporation and annealing properties in a-Si,Ge:H,F alloys
studied by nuclear elastic scattering and IR absorption," in Materials
Issues in Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa
and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 283-288.
10.D.-S.
Shen, J. Kolodzey, D. Slobodin, J.P. Conde, C. Lane, I. H. Campbell, P.M.
Fauchet and S. Wagner, "Microcrystallinity in a-Si,Ge:H,F alloys," in Materials
Issues in Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa
and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 301-306.
11.J.
Kolodzey, S. Aljishi, R. Schwarz, D.-S. Shen, S. Quinlan, S. A. Lyon and
S. Wagner, "Electron and hole transport perpendicular to the planes of
a-Si:H/a-Si,Ge:H compositional superlattices," in Materials Issues in
Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa and A. Madan,
editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 429-434.
12.J.
Kolodzey, Y. Okada, D.-S. Shen, S.-F. Chou, R. Schwarz and S. Wagner, "X-ray
diffraction and infrared absorption of annealed a-Si:H,F/a-Si,Ge:H,F superlattices,"
in Semiconductor--Based Hetero-Structures:Interfacial
Structure & Stability, M. L. Green et al., eds. Metallurgical Society
Meeting Proc., Warrendale, PA, 1986, pp. 223-229.
13.P.M.
Fauchet, D. Hulin, A. Migus, A. Antonetti, J. Kolodzey and S. Wagner, "Femtosecond
spectroscopy in a-Si:H," Proc. 18th International Conf. on the Physics
of Semiconductors, Stockholm, 1986, World Scientific, Singapore, 1987,
pp. 1029-1032.
14.S.
Aljishi, Z E. Smith, V. Chu, J. Kolodzey, D. Slobodin, J. Conde, D.-S.
Shen and S. Wagner, "Light-induced defect generation and thermal healing
processes in amorphous silicon-germanium alloys," Proc. Int. Conf. on
Stability of Amorphous Silicon Alloy Materials and Devices, Palo Alto,
Jan. 1987, B. L. Stafford and E. Sabisky, eds. (AIP Conf. Proc. 157, New
York, 1987) pp. 25-32.
15.R.
Schwarz, J. Kolodzey, D. Slobodin, Y. Okada, V. Chu, S. Aljishi, Z E. Smith
and S. Wagner, "Comparison of diffusion length in a-Si,Ge:H,F after light
or proton irradiation," Proc. International Conf. on Stability of Amorphous
SiliconAlloy Materials and Devices,Palo
Alto, Jan. 1987, B. L. Stafford and E. Sabisky, eds. (AIP Conf. Proc. 157,
New York, 1987) pp. 87-94.
16.R.
Schwarz, K. Dietrich, S. Goedecker, J. Kolodzey, D. Slobodin and S. Wagner,
"Temperature dependence of optical properties and minority carrier diffusion
length in a-Si Ge:H,F, in Amorphous Silicon Semiconductors -Pure and
Hydrogenated, Y. Hamakawa, A. Madan and M. Thompson, eds., Mat. Res.
Soc. Symp. Proc., vol. 95, 1987, pp. 353-359.
17.S.
Aljishi, D.-S. Shen, V. Chu, Z E. Smith, J.P. Conde, J. Kolodzey, D. Slobodin
and S. Wagner, "Recombination and electronic transport in low gap a-Si,Ge:H,F
alloys," in Amorphous Silicon Semiconductors - Pure and Hydrogenated,
Y. Hamakawa, A. Madan and M. Thompson, eds., Mat. Res. Soc. Symp. Proc.,
vol. 95, 1987, pp. 323-328.
18.V.
Chu, S. Aljishi, J.P. Conde, Z E. Smith, D.-S. Shen, D. Slobodin, J. Kolodzey,
C. R. Wronski and S. Wagner, "Schottky barrier devices on a-Si, Ge:H,F
alloys," 19th IEEE Photovoltaic Specialists Conf. Record, (IEEE,
New York, 1987) pp. 610-614.
19.D.-S.
Shen, J.P. Conde, S. Aljishi, Z E. Smith, V. Chu, J. Kolodzey and S. Wagner,
"The electron collection efficiency of a-Si,Ge:H,F at 300 K to 400 K,"
19th
IEEE Photovoltaic Specialists Conf. Record, (IEEE, New York, 1987)
pp. 884-888.
20.J.P.
Conde, V. Chu, S. Aljishi, D.-S. Shen, Z E. Smith, J. Kolodzey and S. Wagner,
"a-Si:H,F/a-Si,Ge:H,F superlattices as low bandgap absorbers for solar
cells," 19th IEEE Photovoltaic Specialists Conf. Record, (IEEE,
New York, 1987) pp. 1107-1110.
21.J.
Kolodzey, S. Boor, P. Saunier, J. W. Lee and H.-Q. Tserng, "Microwave performance
of InAlAs/InGaAs high electron mobility transistors at 77 K," Proc.
IEEE/Cornell University Conf. on Advanced Concepts in High Speed Semiconductor
Devices and Circuits, August 1987, (IEEE, New York, 1987) pp. 53-59.
22.T.K.
Higman, J.M. Higman, M. A. Emanuel, K. Hess, J.J. Coleman, and J. Kolodzey,
``The switching mechanism in the heterostructure hot electron diode," 45th
Annual Device Research Conference Program, IEEE Trans. Electron Devices,
vol. ED-34, p. 2381, 1987.
23.J.
Kolodzey, I. Adesida, J. Laskar, S. Boor, S. Reis, A. Ketterson, A. Y.
Cho, R. Fischer, and D. Sivco, ``Frequency response of AlInAs/GaInAs/InP
modulation doped field effect transistors at cryogenic temperature," 46th
Annual Device Research Conference Program, Boulder, June 1988, IEEE
Trans. Electron Devices, vol. 35, p. 2442, 1988.
24.T.
Fischer, P. Hanesch, T. Muschik, J. Kolodzey, R. Schwarz, G. Neff, H. Schneider,
and M. Stanger, ``Thermal stability of a-Si:H/a-SiC:H superlattices studied
by hydrogen effusion, X-ray diffraction, IR spectroscopy and photoluminescence,"
Proc.
10th European Photovoltaic Conf., Lisbon, 1991.
25.G.
Zorn, H. Goebel, J. Kolodzey, T. Fischer, P. Hanesch, and R. Schwarz, ``Hydrogen
loss and diffusion in amorphous Si/SiC multilayers," Materials Science
Forum, vols. 79--82, (Copyright TransTech Publications, Zurich, 1991)
pp. 887--892.
26.J.
Laskar, R.N. Nottenburg, A.F.J. Levi, S. Schmitt-Rink, J. Kolodzey, D.
A. Humphrey, R. A. Hamm and M. B. Panish, ``Non-equilibrium transport in
ultra-fast InGaAs/InP heterostructure bipolar transistors," Proc. Int.
Conf. on InP and Related Compounds, Wales, April, 1991.
27.J.
Kolodzey, J. Krajewski, R. Shekhar, M. Barteau, R. Schwarz, T. Muschik,
F. Wang, R. Plaettner, and E. Guenzel, ``Optoelectronic properties of amorphous
SiGeC:H alloys,''in Amorphous
Silicon Technology -- 1992, A. Madan, Y, Hamakawa, M. Thompson, E.
A. Schiff, and P. G. LeComber, eds., Mat. Res. Soc. Symp. Proc., vol. 258,
pp. 637--642, 1992.
28.R.
Schwarz, T. Fischer, P. Hanesch, J. Lanz, J. Kolodzey, G. Zorn, H. Goebel,
``Anomalous carbon interdiffusion in a-Si:H/a-SiC:H multilayers,'' Amorphous
Silicon Technology -- 1992,A.
Madan, Y, Hamakawa, M. Thompson, E. A. Schiff, and P. G. LeComber, eds.,
Mat.
Res. Soc. Symp. Proc., vol. 258, 1992.
29.J.
Kolodzey, S. Zhang, P. O'Neil, E. Hall, R. McAnnally, and C. P. Swann,
``Growth of GeC alloys by molecular beam epitaxy,'' Proc. 5th Int. Conf.
on Silicon Carbide and Related Materials, Washington, DC, 1993, Inst. Phys.
Conf. Ser. No. 137, Chapter 3, pp. 357--360.
30.J.
Kolodzey, P.A. O'Neil, S. Zhang, B. Orner, K. M. Unruh, and C. P. Swann,
``Growth and properties of SiGeC alloys,'' 1994 North American Conference
on Molecular Beam Epitaxy, Urbana, IL, October, 1994.
31.M.
G. Mauk, Z. A. Shellenbarger, B. W. Feyock, K. J. Roe, J. Kolodzey, and
J. J. Kramer, ``Selective and lateral epitaxy of b-SiC
on silicon for high-temperature electronics applications,'' Trans. 3rd
Int. High Temperature Electronics Conf. (HiTEC), (Albuquerque, NM, June
1996), vol. 2, pp. P173-P178.
32.G.
Qui, J. Olufemi Olowolafe, J. Kolodzey, B. A. Orner, ``Interaction of metals
with SiGeC and GeC alloys: the role of C on thermal and electrical stability,''
in Material Research Society 1996 Fall Meeting, Symposium, , editors,
Mat. Res. Soc. Symp. Proc., vol. , 1996, pp. .
33.X.
Shao, R. Jonczyk, M. Dashiell, D. Hits, B. A. Orner, A-S. Khan, L. Kulik,
K. Roe, D. van der Weide, J. Kolodzey, P. R. Berger, M. Kaba, M. Barteau,
and K. M. Unruh, "Ordering of SiGeC islands grown on (100) and (311) Si
substrates," in Materials Research Society 1997 Spring Meeting, Symposium
,, editors, Mat. Res. Soc. Symp.
Proc., vol., 1997, pp..
34.F.
Chen, R. T. Troeger, K. Roe, M. D. Dashiell, R. Jonczyk, D.S. Holmes, R.
G. Wilson and J. Kolodzey, ``Electrical properties of SiGeC and GeC alloys,''
J.
Electronic Materials, v. 26, pp. 1371-1375, 1997.
35.A.
Orner, F. Chen, D. Hits, M. W. Dashiell, and J. Kolodzey, ``Optical constants
of B and P doped GeC alloys on Si substrates,'' in SPIE Optoelectronics:
'97:
Silicon-Based
Monolithic and Hybrid Optoelectronic Devices, Proc. SPIE Proc. vol.
3007, pp. 152-161, 1997.
36.X.
Shao, S. L. Rommel, B. A. Orner, H. Feng, M. Dashiell, J. Kolodzey, and
P. R. Berger, ``GeC/Si Heterojunction Photodiodes,'' in Silicon-Based
Monolithic and Hybrid Optoelectronic Devices, SPIE Proc. vol. 3007,
pp. 162-169, 1997.
37.M.
W. Dashiell, R. T. Troeger, L. V. Kulik, A-S. Khan, F. Chen, K. Roe, B.
A. Orner, P. R. Berger, J. Kolodzey, and R. G. Wilson, ``Electrical
and optical properties of phosphorus doped GeC,'' Seventh International
Symposium on Silicon Molecular Beam Epitaxy in Banff, Canada, (July 13-17,
1997), Thin Solid Films, v. 321, pp. 47-50, 1998.
38.Kelly
E. Junge, Rudiger Lange, Jennifer M. Dolan, Stefan Zollner, Josef Humlicek,
M. W. Dashiell; D. A. Hits, B. A. Orner, and James Kolodzey, "Ellipsometry
studies, optical properties, and band structure of Ge1-yCy,
Ge-rich Si1-x-yGexCy, and boron-doped
Si1-xGex alloys," in MRS 1998 Spring Meeting, Epitaxy
and Applications of Si-Based Heterostructures, E.A. Fitzgerald, P.M.
Mooney, D.C. Houghton, editors, Mat. Res. Soc. Symp. Proc., vol. 533, p
125-129, 1998.
39.L.
V. Kulik, C. Guedj, M. W. Dashiell, J. Kolodzey, and A. Hairie, ``The vibrational
properties of substitutional carbon in SiGe alloys,'' Proc. 24 th International
Conf. on the Physics of Semiconductors, Israel, 1998, World Scientific,
Singapore, pp. xxx, 1998.
40.Fen
Chen, Baozhen Li, T. D. Sullivan, C. L. Gonzalez,
C. D. Muzzy, H.K. Lee, M. D. Levy, M. W. Dashiell, and J. Kolodzey, "The
mechanical properties of common interlevel dielectric films and their influences
on aluminum interconnect extrusions," in MRS Fall Meeting 1999,
Thin
Film - Stresses & Mechanical Properties VIII, paper V9.4, Mat.
Res. Soc. Symp. Proc. v. 594, p. 421, 2000.
41.K.
J. Roe, J. Kolodzey, C. P. Swann, M. W. Tsao, J. F. Rabolt, J. Chen, G.
R. Brandes, and D. Jacobsen, "The electrical
and optical properties of thin film diamond implanted with silicon,"
Proceedings of the ICSFS-10 Conf., Princeton, July 2000.
42.T.
Adam, J. Kolodzey, and C. P. Swann, "The
electrical properties of MIS capacitors with AlN gate dielectrics,"
Proceedings of the ICSFS-10 Conf., Princeton, July 2000.
43.G.
Katulka, J. Kolodzey, K. J. Roe, M. W. Dashiell, T. Adam, R. G. Wilson,
Mei Wei Tsao, J. F. Rabolt, and C. P. Swann, "The
electrical characteristics of silicon carbide alloyed with germanium,"
Proceedings of the ICSFS-10 Conf., Princeton, July 2000.
44.J.
Kolodzey, K. J. Roe, G. Katulka, R. G. Wilson, C. P. Swann, R.
C. Clarke, G. C. DeSalvo, G. Eldridge
and D. Jacobson,"Heterostructures
Based on Silicon Carbide Implanted with Germanium," Tech. Digest of
the 27 th Int. Symp. on Compound Semiconductors, Oct., 2000, Monterey,
paper WC-5, p. 131.
45.J.
Kolodzey, T. Adam, D. Prather, S. Shi, G. Looney and A. Rosen, "The
Fabrication of Silicon-Germanium TeraHertz Microdisk Resonators," Tech.
Digest of the Middle
Infrared Coherent Sources International Workshop - MICS-2001, St. Petersburg,
Russia, 25–29 June 2001
46.F.
Chen and J. Kolodzey, “Current transport mechanisms of Ge1-yCy
/Si heterojunction diodes,” IBM Microelectronics, USA; University of Delaware,
USA, The Sixth International Conference on Solid-State and Integrated-Circuit
Technology (ICSICT 2001) , Shanghai, China, October 22–25, 2001.
47.I.
Yassievich, M. Kagan, R. T. Troeger, S. K. Ray, and J. Kolodzey, “Stimulated
THz emission of SiGe/Si quantum-well structures doped with boron, “ Proceedings
of the E-MRS Spring Meeting, June 2002, Strasbourg.
48.M.
S. Kagan, I. V. Altukhov, E. G. Chirkova, K. A. Korolev, V. P. Sinis, R.
T. Troeger, S. K. Ray, and J. Kolodzey, “Stimulated THz emission of acceptor-doped
SiGe/Si quantum-well structures,”
10th Int. Symposium, Nanostructures: Physics and Technology, St. Petersburg,
Russia, June 2002.
49.T.
N. Adam, R. T. Troeger, S. K. Ray, U. Lehmann and J. Kolodzey, “Terahertz
Emitting Devices Based on Intersubband Transitions in SiGe Quantum Wells,”
Proc. 10th Int. Symposium on Nanostructures: Physics and Technology, St.
Petersburg, Russia, June 2002.
50.I.V.
Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray,
J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, and I.N. Yassievich, “Stimulated
THz emission of acceptor-doped SiGe/Si quantum-well structures,” Proc.
of the Int. Conf. on the Physics of Semiconductors, ICPS - 02, Glasgow,
2002.
51.T.
Adam, R. T. Troeger, S. Ray, U. Lehmann, S. Shi, D. Prather, and J. Kolodzey,
“The Design and Fabrication of Microdisk
Resonators for Terahertz Frequency Operation,” Proc. IEEE Lester Eastman
Conference on High Performance Devices, paper IV-8, pp. 402-408, August
2002.
52.M.
W. Dashiell, R. Leeson, K. Roe, Anand T. Kalambur, J. F. Rabolt, and J.
Kolodzey, “The Electrical Effects
of DNA as the Gate Electrode of MOS transistors,” IEEE Lester Eastman
Conference on High Performance Devices, paper
IV-8, pp. 259-264, August 2002.
53.K.
J. Roe, M. W. Dashiell, G. Xuan, E. Ansorge, G. Katulka, N. Sustersic,
X. Zhang and J. Kolodzey, G.C. DeSalvo, J. R. Gigante and R.C. Clarke,
“Ge Incorporation in SiC and the Effects
on Device Performance,” IEEE Lester Eastman Conference on High Performance
Devices, paper PS-25, pp.
201-206, August 2002.
54.I.V.
Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray,
J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, and I.N. Yassievich, “Stimulated
THz emission of acceptor-doped SiGe/Si quantum-well structures,” paper
X.6 at the WOCSDICE 2002, 26th Workshop on Compound Semiconductor Devices
and Integrated Circuits held in Europe, May 21 - 25, 2002, Chernogolovka,
Russia.
55.M.W.
Dashiell, Xin Zhang, G. Xuan, and J. Kolodzey, “Pseudomorphically
Strained Layers in 4H SiC formed by Germanium Implantation,” in MRS
Fall Meeting 2002, Symposium K Silicon Carbide--Materials, Processing,
and Devices, S.E. Saddow, D.J. Larkin, N.S. Saks, A. Schoener, and
M. Skowronski, editors, Mat. Res. Soc. Symp. Proc. v. 742, 2002, pp. K6.7.1
- K6.7.6.
56.R.T.
Troeger, T.N. Adam, S.K. Ray, P.C. Lv, U. Lehmann and J. Kolodzey, “Terahertz-Emitting
Silicon-Germanium Superlattices Based On Hole-Level Intersubband Transitions,”
in MRS Fall Meeting 2002 Symposium M, Progress in Semiconductor Materials
II--Electronic and Optoelectronic Applications, B.D. Weaver, M.O. Manasreh,
C.C. Jagadish, and S. Zollner, editors, Mat. Res. Soc. Symp. Proc. v. 744,
2002, pp. M2.4.1- M2.4.6.
57.S.K.
Ray, T.N. Adam, C.P. Swann and J. Kolodzey, and G.S. Kar, “Low
Thermal Budget NiSi Films on SiGe Alloys,” in MRS Fall Meeting 2002,
Symposium-N, Novel Materials and Processes for Advanced CMOS, M.I.
Gardner, J-P. Maria, S. Stemmer, and S. De Gendt, editors, Mat. Res. Soc.
Symp. Proc. v. 745, 2002, pp. N6.6.1 - N6.6.6.
58.J.
Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, G. Looney, A.
Rosen, M. S. Kagan, and Irina N. Yassievich, “The
Design and Operation of TeraHertz Sources Based on Silicon Germanium Alloys,”
4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF
Systems, 9 - 11th April, 2003, Grainau, Germany, Silicon RF 2003 Digest.
(invited talk)
59. J. Kolodzey, “Sources and detectors of terahertz signals for medical applications,” invited talk at the Workshop on Optical/RF/Microwave Technologies for Medical Applications, as part of the IEEE International Microwave Symposium, Philadelphia, Pennsylvania, June 8-13, 2003. (invited talk)
60. J. Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, I. Yassievich, and M. Kagan, “Terahertz sources and detectors based on SiGe nanostructures,” 11th International Symposium on Nanostructures: Physics and Technology, St Petersburg, Russia, 23–28, June 2003, special issue of International Journal of Nanoscience, World Scientific Publishing Co., in press.
61. P.-C. Lv, S. K. Ray, R. T. Troeger, T. N. Adam, X. Zhang, C. Ni, and J. Kolodzey, "Characterization of MBE -grown silicon germanium/silicon multiple quantum wells for terahertz detector applications," presented at Electronic Materials Conference, Salt Lake City, 2003.
62. J. Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, M. S. Kagan, I. N. Yassievich, and Maxim Odnoblyudov, “The characteristics of terahertz sources and detectors based on SiGe nanostructures,” Proc. of IWPSD-2003, Twelfth International Workshop on The Physics of Semiconductor Devices 16-20 Dec., 2003, Chennai, India. (invited talk)
63. J. Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, “The characteristics of terahertz lasers,” Proc. of NLS-2003, National Laser Symposium 2003, 22-24 Dec., 2003, Kharagpur, India. (invited talk)
64. Ralph T. Troeger, Thomas N. Adam, Samit K. Ray, Pengcheng Lv, Sangcheol Kim, Guangchi Xuan, Suddhasatwa Ghosh, and James Kolodzey, “Terahertz-emitting devices based on boron-doped silicon,” in 2004 International Microwave Symposium, Fort Worth, Texas, June 6-11, 2004, IMS2004 Technical Digest.
65. J. Kolodzey, Ralph T. Troeger, Pengcheng Lv, and Sangcheol Kim, “Terahertz emitting devices based on dopant transitions in silicon,” IEEE LEOS 2004 First IEEE International Conference on Group IV Photonics, Hong Kong, 29 Sept. 2004. (invited talk)
66. J. Kolodzey, Ralph T. Troeger, Pengcheng Lv, Sangcheol Kim, “Characteristics of terahertz devices based upon impurity-level transitions,” 12th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuania, 22 Aug. 2004. (invited talk)
67. James Kolodzey, Pengcheng Lv, Ralph Thomas Troeger, and Sangcheol Kim, “Terahertz emitting devices based on impurity transitions in doped silicon,” SPIE International Symposium on OpticsEast, Nanosensing: Materials and Devices (OE103), Philadelphia, 25–28 October 2004. (invited talk)
68. R. T. Troeger, P.-C. Lv, T. N. Adam, Samit K. Ray, S. Kim, and J. Kolodzey, “Investigation of Terahertz-emission from silicon devices doped with boron,” submitted to the 2004 Lester Eastman Conference, Rensselaer Polytechnic Institute, August 4-6, 2004.
69. P.-C. Lv, R.T. Troeger, S. Kim, X. Zhang, G.
Xuan, S. Ghosh, J. Kolodzey, I.N. Yassievich, M.A. Odnoblyudov, and M.S.
Kagan, “Terahertz electroluminescence from impurity doped silicon,” 6th
International Conference on Mid-Infrared Optoelectronic Materials and Devices,
St Petersburg, June 28 -- July 02, 2004.
III. Book Chapters
1.J.
Kolodzey, "CRAY-1 computer technology," in Tutorial: VLSI Support Technologies,
(Computer-Aided Design, Testing, and Packaging), Rex Rice, ed., (IEEE
Computer Soc. Press, ISBN 0-8186-0386-0), 1982, pp. 412-417.
2.P.M.
Fauchet, D. Hulin, G. Hamoniaux, A. Orszag, J. Kolodzey and S. Wagner,
"Femtosecond spectroscopy of hot carriers in germanium," in Ultra Fast
Phenomena V, G. R. Fleming and A. E. Siegman, editors, Springer-Verlag,
1986, pp. 248-250.
3..
J. Kolodzey, ``Molecular beam epitaxy of InAlGaAs,'' Handbook of Thin Film
Process Technology, S. Ismat Shah, ed., IOP Publishing, 1995.
4..
J. Kolodzey, ``Molecular beam epitaxy of SiGe Alloys,'' Handbook of Thin
Film Process Technology, S. Ismat Shah, ed., IOP Publishing, 1995.
5.J.
Kolodzey, L. V. Kulik and M. W. Dashiell, "The effects of carbon on the
structural and optical properties of SiGeC alloys," in SiGeC Alloys
and Their Applications, S. Zollner and Sokrates Pantelides, editors,
Gordon & Breach Science Publishers SA, 2002.
6.J.
Kolodzey, "Silicon germanium alloy devices," in Hetero-Structures for
High-Performance Devices, Colin Wood and Maurice H. Francombe, Academic
Press, 2001.
7.J.
Kolodzey and T. N. Adam, “The design and fabrication of integrated THz
resonators,” in Sensing Science and Electronic Technology at THz Frequency,
ed. D. Woolard, 2002.