Resume

Synopsis: World-class scientist/engineer in the field of optoelectronics with 18 years experience. Inventor of the MARS micromechanical fast variable attenuation element. Inventor of flip-chip integrated short wavelength parallel optic chip technology. Author of 69 issued patents. Expert in optoelectronic and electronic devices and processing; high-speed optoelectronic packaging and flip-chip bonding; optical, electical thin-films.

Education:

PhD, Princeton University , Electrical Engineering (1988).

• Thesis: Invented photovoltaic quantum well mid-infrared detector.

• Minor: Nuclear fusion electrical energy generation.

• Honors: DOE Magnetic Fusion Fellowship; National Science Foundation Fellowship.

BS, University of California , Santa Barbara , Electrical Engineering (1983).

• GPA:4.00

• Honors: Schlumberger Fellowship; Mortar Board Award (1 st in overall university graduating class).

Work Experience since PhD:

(6/02-) : University of Delaware , Electrical and Computer Engineering: Associate Professor

Have demonstrated integrated Ge photodetectors on GaAs for monolithic OE/VLSI photoreceivers. Future work is to show emitters as well for extending parallel optics to long wavelengths for metro applications. Setting up lab to construct vcsels. Developing extreme high temperature fiber optic sensors.

(9/00-6/02) : Aralight, Inc.: cofounder and Chief Scientist

This startup was spun out from Lucent to commercialize the integrated two-dimensional vcsel /detector-circuit chip technology I invented at Bell Labs. Starting with four of us, I helped build an organization of 35 people, established technical directions, managed intellectual property, and we have made prototypes of our first product. I personally authored or acted as technical liason on 12 filed patents for Aralight, 2 of which have issued, relating primarily to the electrical, optical, and thermal packaging of the chip technology.

(5/88-9/00) : Bell Laboratories, Advanced Photonics Research Department: MTS

I was an “inventor-on-demand” routinely providing new device technology to satisfy system requirements. I view myself as a physical solution maker and problem solver, both theoretical and experimental, not attached to any particular technology, but developing in any platform that meets the requirements, from MEMS to HBT's .

key publications authored by me:

· “Optoelectronic-in-VLSI Technology,” in Wiley encyclopedia of Electrical and Electronics Engineering (1999). This article reviews the technology for the integration of large arrays of vertical-cavity optoelectronic devices (lasers, detectors, and modulators) to VLSI circuitry. This technology is currently being explored for the production of terabit-capacity switches employing optical interconnections. The technology used is a variation of flip-chip bonding that allows ultra low capacitance (10 fF ) micro-bumping, and substrate removal.

· “Silicon Modulator Based on Mechanically-Active Anti-Reflection Layer with 1 Mbit /sec Capability for Fiber-in-the-Loop Applications,” in IEEE Photonics Technology Letters, vol. 6, p. 1119-1121 (1994). This article describes the first MARS device, which was designed for medium data rate (1-10 Mbit /sec) optical transmission from the home in fiber-to-the-home systems. The MARS device has also found a variety of other applications for its rapidly (sub-microsecond) reconfigurable and continuously variable reflectivity, including dynamic equalization of power levels in WDM networks and as a variable optical attenuator.

· “Modeling of Picosecond Pulse Propagation in Microstrip Interconnections on Integrated Circuits,” in IEEE Transactions on Microwave Theory and Techniques, publication repeated in Microelectronic System Interconnections, IEEE Press , for its insightful rendering of high speed signals on microwave circuits.

· “Charging effects in electrostatically actuated membrane devices,” Proceedings SPIE Miniaturized Systems with Micro-optics and MEMS. This paper is widely acknowledged as the authoritative elucidation of charging effects in MEMS devices, which are primarily due to gas ionization inducing sheath plasmas near insulators.

Patents: ( United States issue number listed)

4,904,859: "Self Electrooptic Effect Device Employing Asymmetric Quantum Wells".

5,013,685: "Method of Making a Non-Alloyed Ohmic Contact to III-V Semiconductors-on-Silicon".

5,093,695: "Controllable Semiconductor Modulator Having Interleaved Contacts".

5,210,428: "Semiconductor Device Having Shallow Quantum Well Region".

5,170,455: "Optical Connective Device".

5,329,136: "Voltage Tunable Photodetector".

5,385,632: "Method for Manufacturing Integrated Semiconductor Devices"

5,443,685: "Composition and Method for Off-Axis Growth Sites on Nonpolar Substrates".

5,444,270: "Surface-normal Semiconductor Optical Cavity Devices with Antireflective Layers".

5,468,689: "Method for Preparation of SiNx Ga Diffusion Barrier for Use in MBE Growth of GaAs".

5,480,813: "Accurate In-Situ Lattice Matching by Reflection High Energy Electron Diffraction".

5,500,761: "Micromechanical Modulator".

5,510,277: "Surface Treatment for Silicon Substrates".

5,510,291: “Method for Making surface-Normal Semiconductor Optical Cavity Devices”.

5.573,975: “Surface-normal Semiconductor Optical Cavity Devices”.

5,578,162: “Integrated Composite Semiconductor Devices and Method for Manufacture”.

5,589,404: “Monolithically Integrated VLSI Optoelectronic Circuits and Method”.

5,589,974: “Micromechanical Modulator”.

5,605,856: “Method for Designing and Electronic Integrated Circuit with Optical I/O”.

5,625,733: “Arrangement for Interconnecting an Optical Fiber to an Optical Component”.

5,627,383: “Optoelectronic Devices Utilizing Multiple Quantum Well pin Structures”.

5,631,472: “Accurate In-Situ Lattice Matching by Reflection High Energy Electron Diffraction”.

5,636,052: “Direct View Display based on a Micromechanical Modulator”.

5,654,819: “Micromechanical Modulator”.

5,668,023: “Composition for Off-Axis Growth Sites on Nonpolar Substrates”.

5,698,452: “Method of Making Integrated Detector/ Photoemitter with Non-Imaging Director”.

5,710,656: “Micromechanical Optical Modulator having a Reduced-mass Composite Membrane”.

5,735,950: “Method for Producing a Precise Alloy Composition”.

5,767,997: “Method and Arrangement for a Combined Modulator/Photodetector”.

5,784,187: “Wafer Level Integration of an Optical Modulator and III-V Photodetector”.

5,786,925: “Method, Composition for Arbitrary Angle Mirrors in Substrates for Hybrid Opt. Systems”.

5,825,528: “Phase-mismatched Fabry -Perot Cavity Micromechanical Modulator”.

5,838,484: “Micromechanical Optical Modulator with Linear Operating Characteristics”.

5,858,814: “Hybrid Chip and Method Thereof”.

5,870,221: “Micromechanical Modulator having Enhanced Performance”.

5,872,016: “Process of Making an Optoelectronic Device Utilizing MQW pin Structure”.

5,897,333: “Method for Forming Integrated Composite Semiconductor Devices”.

5,900,983: “Level-setting Optical Attenuator”.

5,914,804: “Double-cavity Micromechanical Optical Modulator with Plural Multilayer Mirrors”.

5,918,794: “Solder Bonding of Dense Arrays of Microminiature Contact Pads”.

5,923,951: “Method of Making a Flip-Chip Bonded GaAs-based Optoelectronic Device”.

5,940,723: “ Heteroepitaxial Growth of III-V Materials”.

5,943,155: “MARS Optical Modulators”.

5,943,158: “Micromechanical, Anti-reflection, Switched Optical Modulator Array and Method”.

5,949,561: “Wavelength Demultiplexing Multiple Quantum Well Photodetector”.

5,949,571: “MARS Optical Modulators”.

5,962,846: “Redundant Linear Detection Arrays”.

5,975,408: “Solder Bonding of Electrical Components”.

5,977,571: “Low-loss Connecting Arrangement for Photodiodes”.

5,996,221: “Method for Thermocompression Bonding Structures”.

6,002,513: “Optical Modulator Providing Independent Control of Attenuation and Spectral Tilt”.

6,005,262: “Flip-chip Bonded VCSEL CMOS Circuit with Silicon Monitor Detector”.

6,048,751: “Process for manufacture of composite semiconductor devices.”

6,159,760: “Method of fabricating oxide- aperature vertical cavity surface emitting lasers.”

6,169,833: “CMOS-compatible optical bench.”

6,172,417: “Integrated Semiconductor Devices.”

6,222,206: “Wafer having Top and Bottom Emitting Vertical-Cavity Lasers.”

6,258,616: “Method of Making a Device having a Non-Alloyed Ohmic Contact to a Buried Doped Layer.”

6,271,943: “Wavelength Demultiplexing Stack Photodiode Detector with Electrical Isolation Layers.”

6,277,668: “Optical detector for minimizing optical crosstalk.”

6,307,691: “Optical filter and method for linearization of optical power equalizer.”

6,307,983: “Robotic optical cross-connect.”

6,321,010: “Optical microstructure and method of manufacture.”

6.337,753: “Optical power equalizer.”

6,388,322: “Article comprising a mechanically compliant bump.”

6,424,450: “Optical modulator having low insertion loss and wide bandwidth”

6,434,726: “System and method of transmission using coplanar bond wires.”

6,444,491: “Composite semiconductor devices and method for manufacture thereof.”

Publications grouped by project (most conference proceedings omitted):

CMOS-optoelectronic integration:

[1] "GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates", K.W. Goossen, G.D. Boyd, J.E. Cunningham, W.Y. Jan, D.A.B. Miller, D.S. Chemla and R.M. Lum , IEEE Phot . Tech. Lett. 1 , 304 (1989).

[2] "Non-alloyed Al ohmic contact to GaAs for GaAs/Si interconnect compatibility", K.W. Goossen, J.E. Cunningham, T. Chiu, D.A.B. Miller and D.S. Chemla , Proc. Inter. Electron Dev. Meet. (IEEE, New York ), p. 409, 1989.

[3] "GaAs-on-Si modulator using a buried silicide reflector", K.W. Goossen, J.E. Cunningham, A.E. White, K.T. Short, W.Y. Jan and J.A. Walker , IEEE Phot . Tech. Lett. 4 , 140 (1992).

[4] "> 30 G W isolation of GaAs devices on doped Si via undoped buffer layers- application to symmetric self- electrooptic effect devices", K.W. Goossen, J.E. Cunningham, W.Y. Jan, and J.A. Walker , IEEE Phot . Tech. Lett. 4 , 763 (1992).

[5] "Monolithic integration of GaAs/AlGaAs multiple quantum well modulators and silicon metal-oxide-semiconductor transistors", K.W. Goossen, J.A. Walker, J.E. Cunningham, W.Y. Jan, D.A.B. Miller, S.K. Tewksbury and L.A. Hornak , OSA Proceedings on Photonics in Switching, J.W. Goodman and R.C. Alferness , eds. (Optical Society of America, Washington, DC 1993), vol. 16 , p. 94.

[6] "Gas composition dependence of silicon nitride used as a gallium diffusion barrier during GaAs MBE growth on Si CMOS", J.A. Walker, K.W. Goossen, J.E. Cunningham, W.Y. Jan , Jour. Elec. Mat. 23 , 1081 (1994).

[7] "Growth of GaAs light modulators on Si by gas source molecular beam epitaxy for 850 nm optical interconnects", J.E. Cunningham, K.W. Goossen, J.A. Walker, W.Y. Jan, M.B. Santos and D.A.B. Miller , J. Vac. Sci. Tech B 12 , 1246 (1994).

[8] "GaAs 850 nm modulators solder-bonded to silicon", K.W. Goossen, J.E. Cunningham, and W.Y. Jan , IEEE Photon. Tech. Lett. 5 , 776 (1993).

[9] "GaAs MQW modulators integrated with Si CMOS", K.W. Goossen, J.A. Walker, L.A. D'Asaro, S.P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D.D. Bacon, D. Dahringer, L.M.F. Chirovsky, A.L. Lentine, and D.A.B. Miller , IEEE Photon. Tech. Lett. 7 , 360 (1995).

[10] "Arrays of optoelectronic switching nodes comprised of flip-chip bonded MQW modulators and detectors on Si CMOS circuitry", A.L. Lentine, K.W. Goossen, J.A. Walker, L.M.F. Chirovsky, L.A. D'Asaro, S.P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, D.D. Bacon, and D.A.B. Miller , IEEE Photon. Tech. Lett. 8 , 221 (1996).

[11] "3-D integration of MQW modulators over active submicron CMOS circuits; 375 Mb/s transimpedance receiver-transmitter circuit", A. Krishnamoorthy, A.L. Lentine, K.W. Goossen, J.A. Walker, T.K. Woodward, J.E. Ford, G.F. Aplin , L.A. D'Asaro, S.P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, L.M.F. Chirovsky, and D.A.B. Miller , IEEE Photon. Tech. Lett. 7 , 1288 (1995).

[12] "Ring oscillator with optical and electrical readout based on hybrid GaAs MQW modulator bonded to 0.8 micron silicon VLSI circuits", A. Krishnamoorthy, T.K. Woodward, R.A. Novotny, K.W. Goossen, J.A. Walker, A.L. Lentine, L.A. D'Asaro, S.P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, L.M.F. Chirovsky, G.F. Aplin , F.E. Kiamilev , and D.A.B. Miller , Electron. Lett. 31 , 1917 (1995).

[13] "1 Gb /sec two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 m m silicon CMOS", T.K. Woodward, A.V. Krishnamoorthy, A.L. Lentine, K.W. Goossen, J.A. Walker, J.E. Cunningham, W.Y. Jan, L.A. D'Asaro, L.M.F. Chirovsky, S.P. Hui, B. Tseng, D. Kossives, D. Dahringer, and R.E. Leibenguth , IEEE Photon. Tech. Lett. 8 , 422 (1996).

[14] “Clocked-sense-amplifier-based smart-pixel optical receivers,” T.K. Woodward, A.V. Krishnamoorthy, K.W. Goossen, J.A. Walker, J.E. Cunningham, W.Y. Jan, L.A. D'Asaro, L.M.F. Chirovsky, S.P. Hui, B. Tseng, D. Kossives, D. Dahringer, D. Bacon, and R. Leibenguth , IEEE Photon. Tech. Lett. 8 , 422 (1996).

[15] “Operation of a single-ended 550 Mbit /s, 41 fJ , hybrid CMOS/MQW receiver-transmitter,” A.V. Krishnamoorthy, T.K. Woodward, K.W. Goossen, J.A. Walker, A.L. Lentine, L.M.F. Chirovsky, S.P. Hui, B. Tseng, R. Leibenguth, J. Cunningham and W.Y. Jan , Electron. Lett. 32 , 764 (1996).

[16] “High-speed optoelectronic VLSI switching chip with > 4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS,” A.L. Lentine, K.W. Goossen, J.A. Walker, L.M.F. Chirovsky, L.A. D'Asaro, S.P. Hui, B. Tseng, R. Leibenguth, J. Cunningham, W. Jan, J-M. Kuo , D. Dahringer, D. Kossives, D. Bacon, G. Livescu , R. Morrison, R. Novotny and D. Buchholz , IEEE J. Selected Topics Quantum Electron. 2 , 77 (1996).

[17] “A hybrid-SEED smart pixel array for a four-stage intelligent optical backplane demonstrator,” D.R. Rolston , D.V. Plant, T.H. Symanski , H.S. Hinton, W.S. Hsiao, M.H. Ayliffe , D. kabal , M.B. Venditti , P. Desai, A.V. Krishnamoorthy, K.W. Goossen, J.A. Walker, B. Tseng, S.P. Hui, J. Cunningham and W. Jan , IEEE J. Selected Topics Quantum Electron. 2 , 97 (1996).

[18] "Demonstration of a photonic buffer based on GaAs modulators bonded directly over active silicon CMOS circuits", A. Krishnamoorthy, J.E. Ford,, K.W. Goossen, J.A. Walker, A.L. Lentine, S.P. Hui, B. Tseng, L.M.F. Chirovsky, R. Leibenguth, D. Kossives, D. Dahringer, L.A. D'Asaro, , G.F. Aplin , F.E. Kiamilev , R.G. Rozier, and D.A.B. Miller , Applied Optics 35 , 2439 (1996).

[19] “ Demultiplexing 2.48 Gb /s optical signals with a CMOS receiver array based on clocked-sense-amplifiers,” T.K. Woodward, A.L. Lentine, K.W. Goossen, J.A. Walker, B. Tseng, S. hui , J. Lothian and R. Leibenguth , IEEE Photon. Tech. Lett. 9 , 1146 (1997).

[20] “Dual-function detector-modulator smart pixel module,” A.V. Krishnamoorthy, T.K. Woodward, K.W. Goossen, J.A. Walker, S.P. Hui, B. Tseng, J. Cunningham, W.Y. Jan, F.E. Kiamilev and D.A.B. Miller , Applied Optics 36 , 4866 (1997).

[21] “Optoelectronic VLSI switching chip with greater than 1 Tbit /s potential optical I/O bandwidth,” A.L. Lentine, K.W. Goossen, J.A. Walker, J.E. Cunningham, W. Jan, T.K. Woodward, A.V. Krishnamoorthy, B. Tseng, S.P. hui , R. Leibenguth, L. Chirovsky, R.A. Novotny, D. Buchholz and R. Morrison , Electron. Lett. 33 , 894 (1997).

[22] “Modulator-driver circuits for optoelectronics,” T.K. Woodward, A.V. Krishnamoorthy, K.W. Goossen, J.A. Walker, B. Tseng, J. Lothian, S. Hui and R. Leibenguth , IEEE Photon. Tech. Lett. 9 , 839 (1997).

[23] “Parallel operation of 50 element two-dimensional CMOS smart-pixel receiver array,” T.K. Woodward, A.L. Lentine, A.V. Krishnamoorthy, K.W. Goossen, J.A. Walker, J.E. Cunningham, W.Y. Jan, B. Tseng, S. Hui and R. Leibenguth , Electron. Lett. 34 , 936 (1998).

[24] “Very large arrays of flip-chip bonded 1.55 um photodetectors ,” K.W. Goossen, J.E. Cunningham, G. Zhang and J.A. Walker , J. Lightwave Technology 16 , 1056 (1998).

[25] “Optoelectronic-VLSI: Photonics integrated with VLSI circuits,” A.V. Krishnamoorthy and K.W. Goossen , IEEE J. Selected Topics Quantum Elec. 4 , 899 (1998).

[26] “Optoelectronic/VLSI,” K.W. Goossen , IEEE Trans. Advanced Packaging 22 , 561 (1999).

[27] “Optoelectronics in VLSI Technology,” K.W. Goossen and A.V. Krishnamoorthy , Wiley Encyclopedia of Electrical and Electronics Engineering (1999).

[28] “The AMOEBA switch: an optoelectronic switch for multiprocessor networking using dense WDM,” A.V. Krishnamoorthy, J.E. Ford, F.E. Kiamilev , R.G. Rozier, S. Hunsche , K.W. Goossen, B. Tseng, J. Walker, J. Cunningham, W. Jan and M.C. Nuss , IEEE J. Selected Topics Quantum Electron. 5 , 261 (1999).

[29] “Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits,” A.V. Krishnamoorthy, L.M.F. Chirovsky, W. Hobson, R. Leibenguth, S. Hui, G. Zydzik , K.W. Goossen, J. Wynn, B. Tseng, J. Lopata, J. Walker, J. Cunningham and L.A. D'Asaro , IEEE Photon. Tech. Lett. 11 , 128 (1999).

[30] “Implant- apertured and index-guided vertical cavity surface emitting lasers,” L.M.F. Chirovsky, W.. Hobson, R. Leibenguth, S. Hui, J. Lopata, G. Zydzik , G. Giaretta , K.W. Goossen, J. Wynn, A.V. Krishnamoorthy, B. Tseng, J. Vandenberg and L.A. D'Asaro , IEEE Photon. Tech. Lett. 11 , 500 (1999).

[31] “16x16 VCSEL array flip-chip bonded to Gbit /s CMOS VLSI circuit,” A. Krishnamoorthy, K. Goossen, L. Chirovsky, R. Rozier, P. Chandramani, W. Hobson, S. Hui, J. Lopata, J. Walker, L. D'Asaro, IEEE Photon. Tech. Lett. 12, 1073-1075 (2000).

MARS work:

[32] "Silicon modulator based on mechanically-active anti-reflection layer with 1 Mbit /sec capability for fiber-in-the-loop applications", K.W. Goossen, J.A. Walker, and S.C. Arney , IEEE Phot . Tech. Lett. 6 , 1119 (1994).

[33] "Possible display applications of the silicon mechanical anti-reflection switch", K.W. Goossen, J.A. Walker, and S.C. Arney , SID Int. Disp . Research Conf., 1994.

[34] "Fabrication of a mechanical anti-reflection switch for fiber to the home systems", J.A. Walker, K.W. Goossen, and S.C. Arney , J. MicroElectroMech . Sys. 5 , 45 (1996).

[35] “Optical design considerations in substrate-air-membrane micromechanical modualtors ,” K.W. Goossen, J.A. Walker and S.C. Arney , Proc. Conf. On Lasers and Electrooptics (CLEO), p. 218 (1996).

[36] “Demonstration of performance-tiered modulators in a WDM PON with a single shared source,” N.J. Frigo , P.P Iannone , K.C. Reichmann, J.A. Walker, K.W. Goossen, S.C. Arney , E.J. Murphy, Y. Ota and R.G. Swartz , Proceedings European Conf. On Optical Communication (ECOC), p. 441 (1995).

[37] “A 1.5 Mb/s operation of a MARS device for communication systems applications,” J.A. Walker, K.W. Goossen, S.C. Arney , N.J. Frigo and P.P Iannone , J. Lightwave Tech. 14 , 2382 (1996).

[38] “The effect of membrane curvature on the optical performance of the MARS modulator,” K.W. Goossen, J.A. Walker and D.S. Greywall , Proc. SPIE MEMS for Optical Processing III (SPIE vol. 3226), p. 147 (1997).

[39] “Micromechanical fiber-optic attenuator with 3 us response,” J.E. Ford, J.A. Walker, D.S. Greywall and K.W. Goossen , J. Lightwave Technology 16 , 1663 (1998).

[40] “Non-intrusive signaling and fault identification in a passive optical network using a reflective modulator,” R. Feldman, L. Boivin , G. Raybon , J.A. Walker, K.W. Goossen and R. Austin , Proceedings European Conf. On Optical Communication (ECOC) (1998).

[41] “Charging effects in electrostatically actuated membrane devices,” K.W. Goossen, J.A. Walker and J.E. Ford , Proceedings SPIE Miniaturized Systems with Micro-optics and MEMS (SPIE vol. 3878), p. 407 (1999).

[42] “Broad spectrum micromechanical equalizer,” J.E. Ford, J.A. Walker, K.W. Goossen and D.T. Neilson , Proceedings European Conf. On Optical Communication (ECOC) (1999).

[43] “A tunable dispersion compensating MARS all-pass filter,” C. Madsen, J.A. Walker, J.E. Ford, K.W. Goossen and G. Lenz , Proceedings European Conf. On Optical Communication (ECOC) (1999).

[44] “Micromechanical gain slope compensator for spectrally linear optical power equalization,” K.W. Goossen, J.A. Walker, D.T. Neilson, J.E. Ford and W.H. Knox , IEEE Photon. Tech. Lett. (2000).

Electroabsorption and modulator studies:

[45] "Room-temperature electroabsorption and switching in a GaAs/AlGaAs superlattice", I. Bar-Joseph, K.W. Goossen, J.M. Kuo , R.F. Kopf, D.A.B. Miller and D.S. Chemla , Appl. Phys. Lett. 55 , 340 (1989).

[46] "Photocurrent saturation in short-period superlattice modulators", K.W. Goossen, J.E. Zucker , I. Bar- Joseph, J.M. Kuo , R.M. Kopf, D.A.B. Miller and D.S. Chemla , Electron. Lett. 26 , 736 (1990).

[47] "Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc- blende heterostructure ", E.A. Caridi , T.Y. Chang, K.W. Goossen and L.F. Eastmann , Appl. Phys. Lett. 56 , 659 (1990).

[48] "Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs <111> self-electro-optic effect device", K.W. Goossen, E.A. Caridi , R.A. Morgan, T.Y. Chang, J.B. Stark and D.A.B. Miller , Appl. Phys. Lett. 56 , 715 (1990).

[49] "GaAs/AlAs low-voltage refractive modulator operating at 1.06 m m", K.W. Goossen, J.E. Cunningham,W.Y . Jan , Appl. Phys. Lett. 57 , 744 (1990).

[50] " Excitonic electroabsorption in extremely shallow quantum wells", K.W. Goossen, J.E. Cunningham, W.Y. Jan , Appl. Phys. Lett. 57 , 2582 (1990).

[51] "High power extremely shallow quantum well modulators", K.W. Goossen, L.M.F. Chirovsky, R.A. Morgan, J.E. Cunningham and W. Y. Jan , IEEE Phot . Tech. Lett. 3 , 448 (1991).

[52] "Fast escape of photocreated carriers out of shallow quantum wells", J. Feldmann , K.W. Goossen, D.A.B. Miller, A.M. Fox, J.E. Cunningham and W.Y. Jan , Appl. Phys. Lett. 59 , 66 (1991).

[53] "Low-voltage, high-saturation, optically bistable self-electro-optic effect devices using extremely shallow quantum wells", R.A. Morgan, M.T. Asom , L.M.F. Chirovsky, M.W. Focht , K.G. Glogovsky , G.D. Guth , G.J. Przybylek , L.E. Smith, and K.W. Goossen , Appl. Phys. Lett. 59 , 1049 (1991).

[54] " Ultrasensitive electroabsorption due to Wannier -Stark localization in extremely shallow superlattices at 77 K", K.W. Goossen, J.E. Cunningham and W.Y. Jan , Appl. Phys. Lett. 59 , 3622 (1991).

[55] "Measured transition from 2-dimensional to 3-dimensional electroabsorption as quantum well barriers are lowered", K.W. Goossen, J.E. Cunningham, M.D. Williams, F.G. Storz , and W.Y. Jan , Phys. Rev. B45 , 13773 (1992) (rapid communications).

[56] "Shallow quantum well excitons : 2D or 3D?", I. Brener , W.H. Knox, K.W. Goossen, and J.E. Cunningham , Phys. Rev. Lett. 70 , 319 (1993).

[57] "Escape tunneling out of shallow multiple quantum wells studied by transient four-wave mixing", G. von Plessen , J. Feldmann , E.O. Gobel , K.W. Goossen, D.A.B. Miller and J.E. Cunningham , Appl. Phys. Lett. 63 , 2372 (1993).

[58] "Monolayer d -doped heterojunction bipolar transistor characteristics from 10 to 350 K", K.W. Goossen, J.E. Cunningham, T.Y. Kuo and W.Y. Jan , Appl. Phys. Lett. 59 , 682 (1991).

[59] "AlGaAs-AlAs quantum well surface-normal electroabsorption modulator operating at visible wavelengths", K.W. Goossen, R.H. Yan , J.E. Cunningham and W.Y. Jan , Appl. Phys. Lett. 59 , 2049 (1991).

[60] "Monolithic optical fiber stub array", K.W. Goossen and J.A. Walker , Optics Letters 17 , 381 (1992).

[61] " Pseudomorphic InGaAs- GaAsP modulators on GaAs", J.E. Cunningham, K.W. Goossen, M.D. Williams and W.Y. Jan , Appl. Phys. Lett. 60 , 727 (1992).

[62] "Defect-free modulator at 1.06 m m using a strain-balanced multiquantum well," K.W. Goossen, J.E. Cunningham and W.Y. Jan , Electron. Lett. 28 , 1833 (1992).

[63] "Measurement of modulation saturation intensity in strain-balanced, undefected InGaAs/ GaAsP modulators operating at 1.064 m m", K.W. Goossen, J.E. Cunningham, M.B. Santos, and W.Y. Jan , Appl. Phys. Lett. 63 , 515 (1993).

[64] "Strain-balanced InGaAs/ GaAsP multiquantum well reflection modulator operating near 1.06 m m on GaAs and silicon substrates," K.W. Goossen, J.E. Cunningham, M.B. Santos and W.Y. Jan , Electron. Lett. 29 , 1985 (1993).

[65] " Independence of absorption coefficient- linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm," K.W. Goossen, M.B. Santos, J.E. Cunningham, and W.Y. Jan , IEEE Phot . Tech. Lett. 5 , 1392 (1994).

[66] " Dimerization induced incorporation nonlinearities in GaAsP ", J.E. Cunningham, M. Santos, K.W. Goossen, M.D. Williams, and W.Y. Jan , Appl. Phys. Lett. 64 , 2418 (1994).

[67] " Picosecond carrier escape by resonant tunneling in psuedomorphic InGaAs/ GaAsP quantum well modulators", N. Froberg , A. Johnson, K.W. Goossen, J.E. Cunningham, M.B. Santos, W.Y. Jan, T. Wood and C.A. Burrus , Appl. Phys. Lett. 64 , 1705 (1994).

[68] "Single layer structure supporting both heterojunction bipolar transistor and surface-normal modulator", K.W. Goossen, J.E. Cunningham and W.Y. Jan , IEEE Phot . Tech. Lett. 4 , 393 (1992).

[69] "Growth of InGaAs/InP optical modulator structures by chemical beam epitaxy", T.H. Chiu, K.W. Goossen, M.D. Williams, and F.G. Storz , Appl. Phys. Lett. 60 , 2365 (1992).

[70] "Monolithic integration of normally-on and normally-off asymmetric Fabry -Perot modulators by selective anti-reflection coating", K.W. Goossen, J.E. Cunningham and W.Y. Jan , Appl. Phys. Lett. 60 , 2966 (1992).

[71] "Voltage-tunable multiple quantum well photodetector vertically integrated with voltage-tunable multiple quantum well filter", K.W. Goossen, J.E. Cunningham, M.B. Santos, and W.Y. Jan , Appl. Phys. Lett. 62 , 3229 (1993).

[72] "THz pulses from the creation of polarized electron-hole pairs in biased quantum wells", P.C.M. Planken , M.C. Nuss , W.H. Knox, D.A.B. Miller, and K.W. Goossen , Appl. Phys. Lett. 61 , 2009 (1992).

[73] "Oscillatory terahertz emission in single quantum wells after coherent optical excitation of light hole and heavy hole excitons ", P.C.M. Planken , M.C. Nuss , I. Brener , K.W. Goossen, M.S.C. Luo, S.L. Chuang , and L. Pfeiffer , Phys. Rev. Lett. 70 , (1993).

[74] " Dimerization induced Be segregation in GaAs", J.E. Cunningham, K.W. Goossen, T.H. Chiu, M.D. Williams, W.Y. Jan, and F. Storz , Appl. Phys. Lett. 62 , 1236 (1993).

[75] "Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells", A. Vinattieri , J. Shah, T. Damen , K.W. Goossen, L. Pfeiffer, M.Z. Maialle and, L.J. Sham , Appl. Phys. Lett. 63 , 3164 (1993).

[76] "Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25 o C to 95 o C operating range", K.W. Goossen, J.E. Cunningham, W.Y. Jan, and D.A.B. Miller , IEEE Phot . Tech. Lett. 5 , 181 (1993).

[77] "Stacked diode electroabsorption modulator", K.W. Goossen, J.E. Cunningham, and W.Y. Jan , IEEE Phot . Tech. Lett. 6 , 936 (1994).

[78] " Electroabsorption in ultranarrow barrier GaAs/AlGaAs multiple quantum well modulators", K.W. Goossen, J.E. Cunningham and W.Y. Jan , Appl. Phys. Lett. 64 , 1071 (1994).

[79] "Optical bandwidth considerations in p-i-n multiple quantum well modulators", K.W. Goossen, J.E Cunningham, and W.Y. Jan , Jour. Lightwave Tech. 13 , 461 (1995).

[80] "Normally-on GaAs/AlAs MQW Fabry -Perot reflection modulators for large two-dimensional arrays", C-H Lin, K.W. Goossen, K. Sadra , and J.M. Meese , Appl. Phys. Lett. 65 , 1242 (1994).

[81] "Normally-on GaAs/AlAs multiple quantum well Fabry -Perot transmission modulator with on/off contrast > 7.4", C.H. Lin, K.W. Goossen, K. Sadra , J.M. Meese , and C.J. Weng , Appl. Phys. Lett. 66 , 1222 (1995).

[82] "InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy", S.W. Lee, K.U. Chu , S.W. Kim, S. Park, O'D. Kwon, K.W. Goossen, and S.S. Pei , Appl. Phys. Lett. 64 , 3065 (1994).

[83] "InGaAs/InP p-i(MQW)-n surface-normal electroabsorption modulators exhibiting > 8:1 contrast for 1.55 m m applications grown by gas source molecular beam epitaxy", R. Pathak, K.W. Goossen, J.E. Cunningham, and W.Y. Jan , IEEE Phot . Tech. Lett. 6 , 1439 (1994).

[84] "High yield, low cost Fabry -Perot modulators utilizing correctable partial anti-reflection coatings", K.W. Goossen, J.E. Cunningham, W.Y. Jan, and J. Centanni , Appl. Phys. Lett. 66 , 1041 (1995).

[85] “On the operational and manufacturing tolerances of GaAs-AlAs MQW modulators,” K.W. Goossen, J.E. Cunningham, W.Y. Jan and R. Leibenguth , IEEE J. Quantum Electron. 34 , 431 (1998).

Heterojunction Bipolar Transistor work:

[86] "Monolayer Be d -doped heterojunction bipolar transistor fabricated using doping selective base contact", T.Y. Kuo , J.E. Cunningham, K.W. Goossen, W.Y. Jan, C.G. Fonstad and F. Ren , Electron. Lett. 26 , 1187 (1990).

[87] "Heterojunction bipolar transistor employing carbon-doped base growth with Trimethyl -Ga and arsine", T.Y. Kuo , T.H. Chiu, J.E. Cunningham, K.W. Goossen, C.G. Fonstad and F. Ren , Electron. Lett. 26 , 1260 (1990).

[88] " Planarized Be d -doped heterostructure bipolar transistor fabricated using doping selective contact and selective hole epitaxy", T.Y. Kuo , J.E. Cunningham, K.W. Goossen, A. Ourmazd , W. Jan, C.G. Fonstad and F. Ren , Japan. Jour. Appl. Phys. 30 , L262 (1991).

[89] " Planarization of emitter-base structure of heterojunction bipolar transistor by doping selective base contact and non-alloyed emitter contact", K.W. Goossen, T.Y. Kuo , J.E. Cunningham, W.Y. Jan, F. Ren and C.G. Fonstad , IEEE Tran. Elec. Dev. 38 , 2423 (1991).

Microwave work:

[90] "Modeling of picosecond pulse propagation in microstrip interconnections on integrated circuits", K.W. Goossen and R.B. Hammond , IEEE Tran. Micro. Theor . Tech., 37 , 469 (1989).

[91] " Femtosecond excitonic optoelectronics", W.H. Knox, J.E. Henry, K.W. Goossen, K.D. Li, B. Tell, D.A.B. Miller, D.S. Chemla , A.C. Gossard , J. English and S. Schmitt-Rink , IEEE J. Quantum Elec., 25 , 2586 (1989).

[92] "Effect of optical phonons on femtosecond pulse propagation in coplanar striplines ", G. Hasnain , K.W. Goossen and W.H. Knox , Appl. Phys. Lett. 56 , 515 (1990).

[93] " Ultrafast nonlinear optical effects in biased semiconductor quantum wells" D.S. Chemla , S. Schmitt- Rink, W.H. Knox, K.W. Goossen, D.A.B. Miller, G. Hasnain , Phys. Stat. Sol. B 159 , 11 (1990).

[94] "Proposed ultrahigh frequency microstrip utilizing buried silicide groundplane ", K.W. Goossen, A.E White and K.T. Short , Electron. Lett. 26 , 49 (1990).

[95] "Propagation of picosecond electrical pulses on a silicon-based microstrip line with buried silicide groundplane ", H. Roskos , M.C. Nuss , K.W. Goossen, A.E. White, D.W. Kisker , K.T. Short, D.C. Jacobson, and J.M. Poate , Appl. Phys. Lett. 58 , 2604 (1991).

[96] "Propagation of terahertz bandwidth electrical pulses on YBaCuO transmission lines on lanthanum aluminate ", M.C. Nuss , P.M. Mankiewich , R.E. Howard, B.L. Straughn , T.E. Harvey, C.D. Brandle , G.W. Berkstresser , K.W. Goossen and P.R. Smith , Appl. Phys. Lett. 54 , 2265 (1989).

[97] "Investigation of high-temperature superconductors with terahertz bandwidth electrical pulses", M.C. Nuss and K.W. Goossen , IEEE J. Quantum Elec. 25 , 2596 (1989).

[98] "Sub-band-gap superconductor absorption in Bardeen-Cooper-Schrieffer framework using the Mattis-Bardeen approach", K.W. Goossen and M.C. Nuss , J. Appl. Phys. 67 , 6568 (1990).

[99] " YBaCuO Superconductors for high-speed interconnects", M.C. Nuss , K.W. Goossen, P.M. Mankiewich , R.E. Howard, B.L. Straughn , G.W. Berkstresser and C.D. Brandle , IEEE Elec. Dev. Lett. 11 , 200 (1990).

[100] "Terahertz surface impedance of thin YBaCuO superconducting films", M.C. Nuss , K.W. Goossen, P.M. Mankiewich and M.L. O'Malley , Appl. Phys. Lett. 58 , 2561 (1991).

[101] "Terahertz time-domain measurement of the conductivity and superconducting bandgap in niobium", M.C. Nuss , K.W. Goossen, J.P. Gordon, P.M. Mankiewich , M.L. O'Malley, and M. Bhushan , Jour. Appl. Phys. 70 , 2238 (1991).

[102] “On the design of coplanar bond wires as transmission lines,” K.W. Goossen , IEEE Microwave and Guided Wave Lett. January 2000.

Thesis work (quantum well IR detection):

[103] "Grating enhanced quantum well detector", K.W. Goossen and S.A. Lyon , Appl. Phys. Lett. 47 , 1257 (1985).

[104] "Conduction-band offset determination in GaAs-AlGaAs through measurement of infrared internal photoemission", K.W. Goossen, S.A. Lyon and K. Alavi , Phys. Rev. B36 , 9370 (1987).

[105] "Photovoltaic quantum well infrared detector", K.W. Goossen, S.A. Lyon and K. Alavi , Appl. Phys. Lett. 52 , 1701 (1988).

[106] "Performance aspects of a quantum-well detector", K.W. Goossen and S.A. Lyon , J. Appl. Phys. 63 , 5149 (1988).

[107] "Grating enhancement of quantum well detector response", K.W. Goossen, S.A. Lyon and K. Alavi , Appl. Phys. Lett. 53 , 1027 (1988).