1. Electroabsorption in extremely shallow quantum wells: Comparison between theory and experiment
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X. Chen, M. P. Earnshaw , K. W. Goossen, W. Batty, D. W. E. Allsopp , and R. Grey

J. Appl. Phys. 85 , 7231 (1999)

2. Dual-function detector-modulator smart-pixel module
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A. V. Krishnamoorthy, T. K. Woodward, K. W. Goossen, J. A. Walker, S. P. Hui, B. Tseng, J. E. Cunningham, W. Y. Jan, F. E. Kiamilev , and D. A. B. Miller

Appl. Opt. 36 , 4866 (1997)

3. Erratum: Photonic page buffer based on GaAs multiple-quantum-well modulators bonded directly over active silicon complementary-metal-oxide-semiconductor (CMOS) circuits [App. Opt. 35 2439 (1996)]
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A. V. Krishnamoorthy et al.

Appl. Opt. 35 , 4637 (1996)

4. Femtosecond coherent fields induced by many-particle correlations in transient four-wave mixing
[PROLA Link]

W. Schäfer , D. S. Kim, J. Shah, T. C. Damen , J. E. Cunningham, K. W. Goossen, L. N. Pfeiffer, and K. Köhler

Phys. Rev. B 53 , 16429 (1996)

5. Exciton ionization induced by an electric field in a strongly coupled GaAs/Al[sub x]Ga[sub 1 - x]As superlattice
[PROLA Link]

G. von Plessen , T. Meier, M. Koch, J. Feldmann , P. Thomas, S. W. Koch, E. O. Göbel , K. W. Goossen, J. M. Kuo , and R. F. Kopf

Phys. Rev. B 53 , 13688 (1996)

6. Photonic page buffer based on GaAs multiple-quantum-well modulators bonded directly over active silicon complementary-metal- oxide-semiconductor (CMOS) circuits
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A. V. Krishnamoorthy et al.

Appl. Opt. 35 , 2439 (1996)

7. Observation of a magnetic-field-induced transition in the behavior of extremely shallow quantum well excitons
[PROLA Link]

M. Fritze , I. E. Perakis , A. Getter, W. Knox, K. W. Goossen, J. E. Cunningham, and S. A. Jackson

Phys. Rev. Lett. 76 , 106 (1996)

8. Normally on GaAs/AlAs multiple-quantum well Fabry --Perot transmission modulator with ON/OFF contrast ratios >~ 7.4
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Chih-Hsiang Lin, K. W. Goossen, K. Sadra , J. M. Meese , and Chun-Jen Weng

Appl. Phys. Lett. 66 , 1222 (1995)

9. Low-temperature growth of 850 nm quantum well modulators for monolithic integration to very large scale integrated electronics on GaAs
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J. E. Cunningham, K. W. Goossen, W. Y. Jan, J. A. Walker, and R. N. Pathak

J. Vac. Sci. Technol. B 13 , 653 (1995)

10. Surfactant assisted growth of 850 nm light modulators
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J. E. Cunningham, K. W. Goossen, W. Jan, and M. D. Williams

J. Vac. Sci. Technol. B 13 , 646 (1995)

11. High yield, low cost Fabry --P[e-acute]rot modulators utilizing correctable partial antireflection coatings
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K. W. Goossen, J. E. Cunningham, W. Y. Jan, and J. Centanni

Appl. Phys. Lett. 66 , 1041 (1995)

12. Normally-on GaAs/AlAs multiple-quantum-well Fabry --Perot reflection modulators for large two-dimensional arrays
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Chih-Hsiang Lin, K. W. Goossen, K. Sadra , and J. M. Meese

Appl. Phys. Lett. 65 , 1242 (1994)

13. InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy
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S. W. Lee, K. U. Chu , S. W. Kim, S. Park, O'D. Kwon, K. W. Goossen, and S. S. Pei

Appl. Phys. Lett. 64 , 3065 (1994)

14. Influence of scattering on the formation of Wannier -Stark ladders and Bloch oscillations in semiconductor superlattices
[PROLA Link]

G. von Plessen , T. Meier, J. Feldmann , E. O. Göbel , P. Thomas, K. W. Goossen, J. M. Kuo , and R. F. Kopf

Phys. Rev. B 49 , 14058 (1994)

15. Dimerization induced incorporation nonlinearities in GaAsP
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J. E. Cunningham, M. B. Santos, K. W. Goossen, M. D. Williams, and W. Jan

Appl. Phys. Lett. 64 , 2418 (1994)

16. Picosecond carrier escape by resonant tunneling in pseudomorphic InGaAs/ GaAsP quantum well modulators
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N. M. Froberg , A. M. Johnson, K. W. Goossen, J. E. Cunningham, M. B. Santos, W. Y. Jan, T. H. Wood, and C. A. Burrus , Jr.

Appl. Phys. Lett. 64 , 1705 (1994)

17. Growth of GaAs light modulators on Si by gas source molecular-beam epitaxy for 850 nm optical interconnects
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J. E. Cunningham, K. W. Goossen, J. A. Walker, W. Jan, M. Santos, and D. A. B. Miller

J. Vac. Sci. Technol. B 12 , 1246 (1994)

18. Electroabsorption in ultranarrow -barrier GaAs/ AlGaAs multiple quantum well modulators
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 64 , 1071 (1994)

19. Electric field dependence of exciton spin relaxation in GaAs/ AlGaAs quantum wells
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A. Vinattieri , Jagdeep Shah, T. C. Damen , K. W. Goossen, L. N. Pfeiffer, M. Z. Maialle , and L. J. Sham

Appl. Phys. Lett. 63 , 3164 (1993)

20. Escape tunneling out of shallow multiple quantum wells studied by transient four-wave mixing
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G. von Plessen , J. Feldmann , E. O. Göbel , K. W. Goossen, D. A. B. Miller, and J. E. Cunningham

Appl. Phys. Lett. 63 , 2372 (1993)

21. Measurement of modulation saturation intensity in strain-balanced, undefected InGaAs/ GaAsP modulators operating at 1.064 mu m
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K. W. Goossen, J. E. Cunningham, M. B. Santos, and W. Y. Jan

Appl. Phys. Lett. 63 , 515 (1993)

22. Voltage-tunable multiple quantum well photodetector vertically integrated with voltage-tunable multiple quantum well filter
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K. W. Goossen, J. E. Cunningham, M. B. Santos, and W. Y. Jan

Appl. Phys. Lett. 62 , 3229 (1993)

23. Dimerization induced Be segregation in GaAs
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J. E. Cunningham, K. W. Goossen, T. H. Chiu, M. D. Williams, W. Jan, and F. Storz

Appl. Phys. Lett. 62 , 1236 (1993)

24. Shallow quantum well excitons : 2D or 3D?
[PROLA Link]

I. Brener , W. H. Knox, K. W. Goossen, and J. E. Cunningham

Phys. Rev. Lett. 70 , 319 (1993)

25. Terahertz emission in single quantum wells after coherent optical excitation of light hole and heavy hole excitons
[PROLA Link]

Paul C. M. Planken , Martin C. Nuss , Igal Brener , Keith W. Goossen, Marie S. C. Luo, Shun Lien Chuang , and Loren Pfeiffer

Phys. Rev. Lett. 69 , 3800 (1992)

26. THz pulses from the creation of polarized electron-hole pairs in biased quantum wells
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Paul C. M. Planken , Martin C. Nuss , W. H. Knox, D. A. B. Miller, and K. W. Goossen

Appl. Phys. Lett. 61, 2009 (1992)

27. Monolithic integration of normally-on and normally-off asymmetric Fabry --Perot modulators by selective antireflection coating
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 60, 2966 (1992)

28. Measured transition from two-dimensional to three-dimensional electroabsorption as quantum-well barriers are lowered
[PROLA Link]

K. W. Goossen, J. E. Cunningham, M. D. Williams, F. G. Storz , and W. Y. Jan

Phys. Rev. B 45, 13773 (1992)

29. Growth of InGaAs/InP optical modulator structures by chemical beam epitaxy
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T. H. Chiu, K. W. Goossen, M. D. Williams, and F. G. Storz

Appl. Phys. Lett. 60, 2365 (1992)

30. Growth of shallow AlGaAs /GaAs quantum wells by gas-source molecular beam epitaxy
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W. Y. Jan, J. E. Cunningham, K. W. Goossen, and W. Knox

J. Vac. Sci. Technol. B 10, 972 (1992)

31. Growth of Ga[sub 1 - x]In[sub x]As/GaAs[sub 1 - y]P[sub y] multiple quantum well structures by gas source molecular beam epitaxy
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J. E. Cunningham, K. Goossen, M. Williams, and W. Jan

J. Vac. Sci. Technol. B 10, 949 (1992)

32. Monolithic optical fiber stub array
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K. W. Goossen and J. A. Walker

Opt. Lett. 17, 381 (1992)

33. Pseudomorphic InGaAs- GaAsP quantum well modulators on GaAs
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J. E. Cunningham, K. W. Goossen, M. Williams, and W. Y. Jan

Appl. Phys. Lett. 60, 727 (1992)

34. Ultrasensitive electroabsorption due to Wannier --Stark localization in extremely shallow superlattices at 77 K
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 59, 3622 (1991)

35. Al[sub x]Ga[sub 1 - x]As-AlAs quantum well surface-normal electroabsorption modulators operating at visible wavelengths
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K. W. Goossen, R. H. Yan , J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 59, 1829 (1991)

36. Low-voltage, high-saturation, optically bistable self-electro-optic effect devices using extremely shallow quantum wells
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R. A. Morgan, M. T. Asom , L. M. F. Chirovsky, M. W. Focht , K. G. Glogovsky , G. D. Guth , G. J. Przybylek , L. E. Smith, and K. W. Goossen

Appl. Phys. Lett. 59, 1049 (1991)

37. Terahertz time-domain measurement of the conductivity and superconducting band gap in niobium
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Martin C. Nuss , K. W. Goossen, J. P. Gordon, P. M. Mankiewich , M. L. O'Malley, and M. Bhushan

J. Appl. Phys. 70, 2238 (1991)

38. Monolayer delta-doped heterojunction bipolar transistor characteristics from 10 to 350 K
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K. W. Goossen, J. E. Cunningham, T. Y. Kuo , W. Y. Jan, and C. G. Fonstad

Appl. Phys. Lett. 59, 682 (1991)

39. Fast escape of photocreated carriers out of shallow quantum wells
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J. Feldmann , K. W. Goossen, D. A. B. Miller, A. M. Fox, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 59, 66 (1991)

40. Propagation of picosecond electrical pulses on a silicon-based microstrip line with buried cobalt silicide ground plane
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Hartmut Roskos , Martin C. Nuss , Keith W. Goossen, David W. Kisker , Alice E. White, Ken T. Short, Dale C. Jacobson, and John M. Poate

Appl. Phys. Lett. 58, 2604 (1991)

41. Terahertz surface impedance of thin YBa [sub 2]Cu[sub 3]O[sub 7] superconducting films
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Martin C. Nuss , Keith W. Goossen, Paul M. Mankiewich , and Megan L. O'Malley

Appl. Phys. Lett. 58, 2561 (1991)

42. Excitonic electroabsorption in extremely shallow quantum wells
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 57, 2582 (1990)

43. GaAs-AlAs low-voltage refractive modulator operating at 1.06 mu m
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K. W. Goossen, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 57, 744 (1990)

44. Sub-band-gap superconductor absorption in Bardeen --Cooper-- Schrieffer framework using the Mattis -- Bardeen approach
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K. W. Goossen and M. C. Nuss

J. Appl. Phys. 67, 6568 (1990)

45. Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs self-electro-optic effect device
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K. W. Goossen, E. A. Caridi , T. Y. Chang, J. B. Stark, D. A. B. Miller, and R. A. Morgan

Appl. Phys. Lett. 56, 715 (1990)

46. Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc- blende heterostructure
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E. A. Caridi , T. Y. Chang, K. W. Goossen, and L. F. Eastman

Appl. Phys. Lett. 56, 659 (1990)

47. Effect of optical phonons on femtosecond pulse propagation in coplanar striplines
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G. Hasnain , K. W. Goossen, and W. H. Knox

Appl. Phys. Lett. 56, 515 (1990)

48. Room-temperature electroabsorption and switching in a GaAs/ AlGaAs superlattice
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I. Bar-Joseph, K. W. Goossen, J. M. Kuo , R. F. Kopf, D. A. B. Miller, and D. S. Chemla

Appl. Phys. Lett. 55, 340 (1989)

49. Propagation of terahertz bandwidth electrical pulses on YBa [sub 2]Cu[sub 3]O[sub 7 - delta ] transmission lines on lanthanum aluminate
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Martin C. Nuss , P. M. Mankiewich , R. E. Howard, B. L. Straughn , T. E. Harvey, C. D. Brandle , G. W. Berkstresser , K. W. Goossen, and P. R. Smith

Appl. Phys. Lett. 54, 2265 (1989)

50. Grating enhancement of quantum well detector response
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K. W. Goossen, S. A. Lyon, and K. Alavi

Appl. Phys. Lett. 53, 1027 (1988)

51. Photovoltaic quantum well infrared detector
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K. W. Goossen, S. A. Lyon, and K. Alavi

Appl. Phys. Lett. 52, 1701 (1988)

52. Performance aspects of a quantum-well detector
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K. W. Goossen and S. A. Lyon

J. Appl. Phys. 63, 5149 (1988)

53. Conduction-band offset determination in GaAs-Al[sub x]Ga[sub [bold 1][bold - ]x]As through measurement of infrared internal photoemission
[PROLA Link]

K. W. Goossen, S. A. Lyon, and K. Alavi

Phys. Rev. B 36, 9370 (1987)

54. Grating enhanced quantum well detector
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K. W. Goossen and S. A. Lyon

Appl. Phys. Lett. 47, 1257 (1985)