University of Delaware - College of Engineering
ELECTRICAL & COMPUTER ENGINEERING

Research

Photonics & Electromagnetics

Broadband Silicon-Based Quantum Dot Absorption Materials

James Kolodzey

We are working with a small business, QuantTera, to develop silicon-germanium based quantum dot optoelectronic materials. The proposed quantum dot nanostructures operate over a wide range of optical wavelengths by virtue of their composition and size distribution are capable of exhibiting diverse controllable and predictable physical responses when subjected to various external conditions. This innovative nanomaterial will be multifunctional which would allow the development of broadly absorbing solar cells on silicon with a single junction technology for alternative energy applications or the development of highly efficient broadband photo-detectors for telecommunications applications. Using layers of silicon-germanium quantum dots that were grown by molecular beam epitaxy, we have fabricated light emitters that operate at low temperatures and up to room temperature.


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