University of Delaware - College of Engineering
ELECTRICAL & COMPUTER ENGINEERING

Research

Communication & Signal Processing

Inverse Lithography

Gonzalo Arce

Inverse Lithography

Similar to photographic printing, optical lithography uses light to expose masks which include transparent and opaque regions. The transmitted energy creates patterns on the underneath wafer. Due to resolution limits of optical lithographic systems, the resolution enhancement techniques (RET) are applied to compensate and minimize the pattern distortions as they are projected onto semiconductor wafers. RET mainly includes three kinds of techniques: optical proximity correction (OPC), phase-shifting masks (PSM), and off-axis illumination (OAI). Inverse lithography research at University of Delaware aims at developing gradient-based RET optimization methods to design mask patterns which effectively reduce the pattern distortions on the wafer. We are also studying double exposure optimization methods, in which the wafers are exposed twice with different optimized mask patterns.

Recent publications

Xu Ma and Gonzalo R. Arce, "Generalized Inverse Lithography Methods for Phase-Shifting Mask Design," Optics Express, Vol. 15, Issue 23, pp. 15066-15079, 2007.

Xu Ma and Gonzalo R. Arce, "Generalized Inverse Lithography Methods for Phase-Shifting Mask Design," in Proceedings of SPIE, vol. 65200U, San Jose, CA, March, 2007.


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